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Epitaxial lateral overgrowth of GaN with chloride-based growth chemistries in both hydride and metalorganic vapor phase epitaxy

机译：氢化物和金属有机气相外延中具有氯化物基生长化学的GaN的外延横向过生长

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Epitaxial lateral overgrowth (ELO) of GaN on SiO sub 2-masked (0001) GaN substrates has been investigated by using chloride-based growth chemistries via hydride vapor phase epitaxy (HVPE) and metal organic vapor phase epitaxy (MOVPE). Diethyl gallium chloride, (C sub 2 H sub 5) sub 2 GaCl, was used in as the MOVPE Ga precursor. The lateral and vertical growth rates as well as the overgrowth morphology of ELO GaN structures are dependent on growth temperature, V/III ratio increase the lateral growth rate and produce ELO lstructures with a planar surface to the GaN prisms. High-quality coalesced and planar ELO GaN has been fabricated by both growth chemistries. The use of the diethyl gallium chloride source allows for the benefits of HVPE growth to be realized within the MOVPE growth environment.

机译：通过使用基于氢化物气相外延（HVPE）和金属有机气相外延（MOVPE）的氯化物基生长化学方法，对SiO亚2掩膜（0001）GaN衬底上的GaN的外延横向过生长（ELO）进行了研究。氯化二乙基镓（（C 2 H 2 H 5）亚2 GaCl）用作MOVPE Ga前驱体。 ELO GaN结构的横向和垂直生长速率以及过度生长的形态取决于生长温度，V / III比增加了横向生长速率，并产生了与GaN棱镜表面平坦的ELO结构。两种生长化学方法均制造出了高质量的聚结和平面形ELO GaN。使用氯化二乙基镓镓可以在MOVPE生长环境中实现HVPE生长的好处。

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《Symposium on GaN and related alloys》|1999年|p.G4.7.1-6|共1页
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R.Zhang; L.Zhang; D.M.Hansen; M.P.Boleslawski; K.L.Chen; D.Q.Lu; B.Shen; Y.D.Zheng; T.F.Kuech;
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中图分类金属学与金属工艺;
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3. Sidewall epitaxial lateral overgrowth of nonpolar a-plane GaN by metalorganic vapor phase epitaxy [J] . Daisuke lida, Takeshi Kawashima, Motoaki Iwaya, Physica status solidi . 2008,第6期

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4. Epitaxial Lateral Overgrowth of GaN with Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase Epitaxy [C] . R.Zhang, L.Zhang Symposium on GaN and related alloys . 1999

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Epitaxial lateral overgrowth of GaN with chloride-based growth chemistries in both hydride and metalorganic vapor phase epitaxy

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