• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Symposium on GaN and related alloys >Growth of oriented thick films of gallium nitride from the melt
【24h】

Growth of oriented thick films of gallium nitride from the melt

机译：从熔体中生长取向的氮化镓厚膜

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

While signifieant strides have been made in the optimization of GaN-based devices on foreign substrates, a more attractive alternative would be homoepitaxy on GaN substrates. The primary motivation of this work is to explore the growth of thick films of GaN from the melt for the ultimate use as substrate material. We have previously demonstrated the synthesis of polycrystalline, wurtzitic gallium nitride and indium nitride by saturating gallim metal and indium metal with atomic nitrogen from a microwave plasma source. Plasma synthesis avoids the high equilibrium pressures required when molecular nitrogen is used as the nitrogen source. Here we report the growth of thick oriented GaN layers using the same technique by the introduction of (0001) sapphire into the melt to serve as a substrate. The mechanism of this growth is not established, but may involve transport of the metal as a liquid film onto the sapphire and subsequent reaction with atomic nitrogen. The films were characterized by x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman sepctroscopy. X-ray diffraction showed that the GaN films were oriented with their c-axes parallel to the sapphire c-axis. The TEM analysis confirmed the orientation and revealed a dislocation density of approximately 10 sup 10 cm sup -2. The E sub 2 Raman active phonon modes were observed in the GaN films.
机译：尽管在优化外来衬底上的GaN基器件方面已取得了长足的进步，但更具吸引力的替代方法是在GaN衬底上实现均质外延。这项工作的主要动机是探索从熔体中生长出的GaN厚膜，以最终用作衬底材料。我们以前已经证明了通过用微波等离子体源中的原子氮使镓金属和铟金属饱和来合成多晶，多晶的氮化镓和氮化铟。等离子体合成避免了使用分子氮作为氮源时所需的高平衡压力。在这里，我们通过将（0001）蓝宝石引入熔体中作为衬底，使用相同的技术报告了厚取向GaN层的生长。这种生长的机理尚未确定，但可能涉及将金属以液态膜的形式传输到蓝宝石上，然后与原子氮反应。通过X射线衍射，扫描电子显微镜，透射电子显微镜和拉曼隔膜法对膜进行表征。 X射线衍射表明，GaN膜的c轴平行于蓝宝石c轴取向。 TEM分析证实了取向，并揭示了大约10 sup 10 cm sup -2的位错密度。在GaN膜中观察到E sub 2拉曼活性声子模式。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号