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首页> 外文会议>Symposium on GaN and related alloys >Inductively coupled plasma etching of III-nitrides in Cl(sub)2/Xe, Cl(sub)2/Ar and Cl(sub)2/He
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Inductively coupled plasma etching of III-nitrides in Cl(sub)2/Xe, Cl(sub)2/Ar and Cl(sub)2/He

机译：Cl（sub）2 / Xe，Cl（sub）2 / Ar和Cl（sub）2 / He中III型氮化物的电感耦合等离子体刻蚀

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摘要

The role of additive noble gases He, Ar and Xe to Cl sub 2-based Inductively Coupled Plasmas for etching of GaN, AlN and InN were examined. The etch rates were a strong function of chlorine concentration, rf chuck power and ICP source power. The highest etch rates for InN were obtained with Cl sub 2/Xe, while the highest rates for AlN and GaN were obtained with Cl sub 2/He. Efficient braking of the III-nitrogen bond is crucial for attaining high tech rates. The InN etching was dominated by physical sputtering, in contrast to GaN and AlN. In the latter cases, the etch rates were limited by initial breaking of the III-nitrogen bond. Maximum selectivities of - 80 for InN to GaN and InN to AlN were obtained.
机译：研究了添加稀有气体He，Ar和Xe对基于Cl亚2基的电感耦合等离子体在GaN，AlN和InN蚀刻中的作用。蚀刻速率是氯浓度，射频卡盘功率和ICP源功率的强大函数。使用Cl sub 2 / Xe获得InN的最高蚀刻速率，而使用Cl sub 2 / He获得AlN和GaN的最高蚀刻速率。 III-氮键的有效制动对于获得高技术含量至关重要。与GaN和AlN相比，InN蚀刻主要通过物理溅射进行。在后一种情况下，蚀刻速率受到III-氮键初始断裂的限制。对于InN对GaN和InN对AlN而言，最大选择性为-80。

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