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首页> 外文会议>Symposium on GaN and related alloys >Influence of Si-doping on carrier localization of MOCVD-grown InGaN/GaN multiple quanturn wells
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Influence of Si-doping on carrier localization of MOCVD-grown InGaN/GaN multiple quanturn wells

机译：硅掺杂对MOCVD生长的InGaN / GaN多量子阱的载流子局部化的影响

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We have systematically studied the influence of Si doping on the optical characteristics of InGaN/GaN multiple quantum wells (MQWs) using photoluminescence (PL), PL excitation (PLE), and time-resolved PL spectroscopy combined with studies of optically pumped stimulated emission and structural properties from these materials. The MOQWs were grown on 1.8-mum-thick GaN layers on c-plnae sapphire films by metalorganic chemical vapor deposition. The structures consisted of 12 MQWs with 3-nm-thick InGaN wells, 4.5-nm-thick GaN barriers, and a 0.1-mum-thick Al sub 0.07 Ga sub 0.93N capping layer. The Si doping level in the GaN barriers was varied from 1 x 10 sub 17 to 3x 10 sup 19 cm sup -3. PL and PLE measurements show a decrease in the Stokes shift with increasing Si doping concentration. The 10 K radiative recombination lifetime was observed to decrease with increasing Si doping concentration (n), from -30 ns (for n<1 x 10 sup 17 cm sup -3) to -4ns (for n=3x10 sup 19 cm sup -3). To elucidate whether non-radiative recombination processes afect the measured lifetime, the temperature-dependence of the measured lifetime was investigated. The reduced Stodes shift, the decrease in radiative recombination lifetime, and the increase in structural and interface quality with increasing Si doping indicate that the incorporation of Si in the GaN barriers results in a decrease in carrier localization at potential fluctuations in the InGaN active regions and the interfaces.
机译：我们通过光致发光（PL），PL激发（PLE）和时间分辨PL光谱结合光泵浦受激发射和激发的研究，系统地研究了Si掺杂对InGaN / GaN多量子阱（MQW）光学特性的影响。这些材料的结构特性。 MOQW通过金属有机化学气相沉积法生长在c-plnae蓝宝石膜上的1.8微米厚的GaN层上。该结构由12个MQW组成，具有3纳米厚的InGaN阱，4.5纳米厚的GaN势垒和0.1微米厚的Al sub 0.07 Ga sub 0.93N覆盖层。 GaN势垒中的Si掺杂水平从1 x 10 sub 17变为3x 10 sup 19 cm sup -3。 PL和PLE测量表明，随着Si掺杂浓度的增加，斯托克斯频移减小。观察到10 K辐射复合寿命随Si掺杂浓度（n）的增加而降低，从-30 ns（对于n <1 x 10 sup 17 cm sup -3）到-4 ns（对于n = 3x10 sup 19 cm sup- 3）。为了阐明非辐射重组过程是否影响测量的寿命，研究了测量寿命的温度依赖性。降低的Stodes位移，降低的辐射复合寿命以及随着Si掺杂的增加而增加的结构和界面质量表明，将GaN势垒中的Si掺入会导致InGaN有源区中电势波动时载流子局部化的降低。接口。

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