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Optical and structural properties of Er(sup)3+-doped GaN Grown by MBE

机译:MBE生长的掺Er(sup)3+的GaN的光学和结构性质

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We report the morphological and compositional characteristics of Er-doped GaN grown by MBE on Si (111) substrates and their effect on optical properties. The GaN was grown by molecular beam epitaxy using solid sources (for Ga and Er) and a plasma gas source for N sub 2. The films emit by photoexcitation in the visible and near infrared wavelengths from the Er atomic levels. The morphology of the GaN:Er films was examined by AFM. Composition was determined by SIMS depth profiling that revealed a large Er concentration at 4.5 x 10 sup 21 atoms/cm sup 3 accompanied by a high oxygen impurity concentration.
机译:我们报告了由MBE在Si(111)衬底上生长的Er掺杂的GaN的形态和组成特征及其对光学性能的影响。通过使用固体源(用于Ga和Er)和用于N sub 2的等离子气体源通过分子束外延生长GaN。通过光激发从Er原子级的可见光和近红外波长发射薄膜。通过AFM检查了GaN:Er膜的形貌。通过SIMS深度剖析确定组成,其揭示出在4.5×10 sup 21原子/ cm sup 3处的高Er浓度,伴随着高的氧杂质浓度。

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