Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE

Tourbot G.; Bougerol C.; Grenier A.; Den Hertog M.; Sam-Giao D.; Cooper D.; Gilet P.; Gayral B.; Daudin B.

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Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE

机译：PA-MBE生长的InGaN / GaN纳米线异质结构的结构和光学性质

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The structural and optical properties of InGaN/GaN nanowire heterostructures grown by plasma-assisted molecular beam epitaxy have been studied using a combination of transmission electron microscopy, electron tomography and photoluminescence spectroscopy. It is found that, depending on In content, the strain relaxation of InGaN may be elastic or plastic. Elastic relaxation results in a pronounced radial In content gradient. Plastic relaxation is associated with the formation of misfit dislocations at the InGaN/GaN interface or with cracks in the InGaN nanowire section. In all cases, a GaN shell was formed around the InGaN core, which is assigned to differences in In and Ga diffusion mean free paths.

机译：通过结合透射电子显微镜，电子断层扫描和光致发光光谱研究了通过等离子体辅助分子束外延生长的InGaN / GaN纳米线异质结构的结构和光学性质。发现根据In含量，InGaN的应变松弛可以是弹性的或塑性的。弹性松弛导致明显的径向In含量梯度。塑性弛豫与InGaN / GaN界面处失配位错的形成或InGaN纳米线截面中的裂纹有关。在所有情况下，都会在InGaN核周围形成GaN壳层，这归因于In和Ga扩散平均自由程的差异。

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《Nanotechnology》 |2011年第7期|共8页
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Tourbot G.; Bougerol C.; Grenier A.; Den Hertog M.; Sam-Giao D.; Cooper D.; Gilet P.; Gayral B.; Daudin B.;
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1. Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE [J] . Tourbot G., Bougerol C., Grenier A., Nanotechnology . 2011,第7期

机译：PA-MBE生长的InGaN / GaN纳米线异质结构的结构和光学性质
2. Study of the pseudo-(1 ×1) surface by RHEED and XPS for InGaN/GaN (0001)/Al_2O_3 heterostructures grown by PA-MBE [J] . E. Cruz-Hernandez, M. Ramirez-Lopez, M. Perez-Caro, Journal of Crystal Growth . 2013,第sepa1期

机译：RHEED和XPS研究PA-MBE生长的InGaN / GaN（0001）/ Al_2O_3异质结构的伪（1×1）表面
3. Different characteristics of InGaN/GaN multiple quantum well heterostructures grown on m-and r-planes of a single n-GaN nanowire using metalorganic chemical vapor deposition [J] . Yong-Ho Ra, Rangaswamy Navamathavan, San Rang Journal of Materials Chemistry, C. materials for optical and electronic devices . 2014,第15期

机译：使用金属有机化学气相沉积法在单根n-GaN纳米线的m和r面上生长的InGaN / GaN多量子阱异质结构的不同特性
4. Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy [C] . A.Kaschner, J.Holst, U.von Gfug, Symposium on GaN and related alloys . 2000

机译：分子束外延生长的Ingan / GaN异质结构中结构性和光学扩增的相关性
5. InGaN/GaN multiple quantum well structures: Submicron structural, optical, electrical and chemical properties. [D] . Li, Ying. 2013

机译：InGaN / GaN多量子阱结构：亚微米结构，光学，电和化学性质。
6. A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates [O] . Dmytro Kundys, Danny Sutherland, Matthew J. Davies, 2016

机译：在a平面和m平面GaN衬底上生长的InGaN / GaN多量子阱的光学和偏振特性的研究
7. Structural and optical properties of InGaN-GaN nanowire heterostructures grown by molecular beam epitaxy [O] . Limbach, F., Gotschke, T., Worschech, L., 2011

机译：分子束外延生长的InGaN-GaN纳米线异质结构的结构和光学性质

Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE

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