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Photoluminescence characterization of Er3+ -implanted silica thin films containing Si nanocrystals

机译:含Si纳米晶的Er3 +注入二氧化硅薄膜的光致发光特性

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Abstract: Si nanocrystals (nc-Si) embedded in silica have recently attracted a lot of attention as a potential optoelectronic material due to their light emission at approximately 1.7 eV. Er$+3$PLU$/ is attractive because its 1.53 $mu@m emission coincides with the low attenuation region of silica optical fibers. In this paper, we report the experimental investigation of energy transfer between nc-Si and Er$+3$PLU$/ in ion implanted material which may relax requirements on the Er$+3$PLU$/ pump source and lead to broad-band pumped optical devices.!12
机译:摘要:由于潜在的光电材料,嵌入在二氧化硅中的Si纳米晶体(nc-Si)最近因其在大约1.7 eV处的发光而备受关注。 Er + 3PLU $ /具有吸引力,因为其1.53μm的发射与石英光纤的低衰减区域相吻合。在本文中,我们报告了离子注入材料中nc-Si与Er $ + 3 $ PLU $ /之间的能量转移的实验研究,这可能会放松对Er $ + 3 $ PLU $ /泵浦源的要求,并导致宽广的带泵浦光学设备!! 12

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