Photocurrent and differential absorption spectra of InGaAsN single- and double-quantum-well structures grown by molecular beam epitaxy

机译：分子束外延生长InGaAsN单量子阱和双量子阱结构的光电流和差分吸收光谱

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We report the photocurrent and differential absorption spectra of an InGaAsN single- and a double-quantum-well (SQW and DQW) structure measured at different reverse bias. The DQW structure shows an additional enhancement in electroabsorption of a maximum /spl Delta//spl alpha/ /spl sim/ 14400 cm/sup -1/, which is 2.6 times larger than the maximum /spl Delta//spl alpha/ /spl sim/ 5400 cm/sup -1/ of the SQW sample.

机译：我们报告了在不同的反向偏置下测得的InGaAsN单和双量子阱（SQW和DQW）结构的光电流和差分吸收光谱。 DQW结构显示最大/ spl Delta // spl alpha / / spl sim / 14400 cm / sup -1 /的电吸收进一步增强，这是最大/ spl Delta // spl alpha / / spl的2.6倍sim / SQW样本的5400 cm / sup -1 /。

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《Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on》|2004年|p.278-280|共3页
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Lay T.S.; Shen R.R.; Lin E.Y.; Kong K.M.; Chen L.R.; Wang J.S.; Lin G.; Chi J.Y.;
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中图分类无线电电子学、电信技术;
关键词
indium compounds; gallium arsenide; gallium compounds; arsenic compounds; III-V semiconductors; semiconductor quantum wells; molecular beam epitaxial growth; photoconductivity; electroabsorption; photocurrent; differential absorption spectra; single-quantum-well structures; double-quantum-well structures; molecular beam epitaxy; electroabsorption; InGaAsN;

机译：铟化合物;砷化镓;镓化合物;砷化合物; III-V族半导体;半导体量子阱;分子束外延生长;光电导性;电吸收;光电流;微分吸收光谱;单量子阱结构;双量子阱结构;分子束外延;电吸收; InGaAsN;

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专利

1. Local vibrational mode absorption of nitrogen in GaAsN and InGaAsN layers grown by molecular beam epitaxy [J] . Alt HC., Riechert H., Wiedemann B., Physica, B. Condensed Matter . 2001,第0期

机译：通过分子束外延生长的GaAsN和InGaAsN层中氮的局部振动模式吸收
2. Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy [J] . I. P. Soshnikov, N. V. Kryzhanovskaya, N. N. Ledentsov, Semiconductors . 2004,第3期

机译：分子束外延生长的InGaAsN量子阱中具有InAs量子点的异质结构的结构和光学性质
3. Analysis of the photoluminescence spectra of Cd_xHg_(1-x)te heteroepitaxial structures with potential and quantum wells grown by molecularbeam epitaxy [J] . Voitsekhovskii A.V., Gorn D.I., Izhnin I.I., Russian physics journal . 2013,第8期

机译：分子束外延生长势阱和量子阱的Cd_xHg_（1-x）te异质外延结构的光致发光光谱分析
4. Photocurrent and differential absorption spectra of InGaAsN single- and double-quantum-well structures grown by molecular beam epitaxy [C] . Lay T.S., Shen R.R., Lin E.Y., International Conference on Indium Phosphide and Related Materials . 2004

机译：分子束外延生长的InGaASN单量子井结构的光电流和微分吸收光谱
5. In-Situ Characterization of the Surfaces & Interfaces in Superconducting Coplanar Waveguides, RNiO3 heterostructures, and Self Assembled ErSb Nanostructures Grown by Molecular Beam Epitaxy [D] . Wilson, Nathaniel Spencer. 2017

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6. Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing [O] . Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, 2014

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7. High-spectral-resolution pulsed photoluminescence study of molecular-beam-epitaxy-grown GaAs/AlxGa1−xAs multi-quantum-well structures using a very-low-power tunable pulsed dye laser [O] . Naganuma M., Song J. J., Kim Y. B., 1986

机译：使用非常低功率的可调脉冲染料激光对分子束外延生长的GaAs / AlxGa1-xAs多量子阱结构进行高光谱分辨率的脉冲光致发光研究

Photocurrent and differential absorption spectra of InGaAsN single- and double-quantum-well structures grown by molecular beam epitaxy

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