Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy

I. P. Soshnikov; N. V. Kryzhanovskaya; N. N. Ledentsov; A. Yu. Egorov; V. V. Mamutin; V. A. Odnoblyudov; V. M. Ustinov; O. M. Gorbenko; H. Kirmse; W. Neumann

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Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy

机译：分子束外延生长的InGaAsN量子阱中具有InAs量子点的异质结构的结构和光学性质

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Results obtained in a study of the structural and optical properties of GaAs-based heterostructures with InAs quantum dot layers overgrown with InGaAsN quantum wells are presented. Transmission electron microscopy has been applied to analyze how the thickness of the InGaAsN layer and the content and distribution of nitrogen in this layer affect the size of nanoinclusions and the nature and density of structural defects. Itis shown that the size of InAs nanodomains and the magnitude of the lattice mismatch in structures containingnitrogen exceed those in nitrogen-free structures. A correlation between the luminescence wavelength and thesize and composition of nanodomains is demonstrated. Furthermore, a correlation between the emission intensity and defect density in the structure is revealed.

机译：提出的研究结果表明，在GaAs基异质结构的结构和光学性质研究中，InGaAsN量子阱覆盖了InAs量子点层。透射电子显微镜已用于分析InGaAsN层的厚度以及该层中氮的含量和分布如何影响纳米夹杂物的尺寸以及结构缺陷的性质和密度。结果表明，含氮结构中InAs纳米域的尺寸和晶格失配的大小超过了无氮结构中的InAs纳米结构域的大小。证明了发光波长与纳米域的大小和组成之间的相关性。此外，揭示了结构中的发射强度与缺陷密度之间的相关性。

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《Semiconductors》 |2004年第3期|共4页
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I. P. Soshnikov; N. V. Kryzhanovskaya; N. N. Ledentsov; A. Yu. Egorov; V. V. Mamutin; V. A. Odnoblyudov; V. M. Ustinov; O. M. Gorbenko; H. Kirmse; W. Neumann;
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1. Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy [J] . I. P. Soshnikov, N. V. Kryzhanovskaya, N. N. Ledentsov, Semiconductors . 2004,第3期

机译：分子束外延生长的InGaAsN量子阱中具有InAs量子点的异质结构的结构和光学性质
2. Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy [J] . Joyce PB., Bell GR., Jones TS., Physical Review, B. Condensed Matter . 2000,第16期

机译：生长速率对分子束外延生长的InAs / GaAs量子点尺寸，组成和光学性质的影响
3. Piezoelectric InAs (211 )B quantum dots grown by molecular beam epitaxy:Structural and optical properties [J] . G. E. Dialynas, S. Kalliakos, C. xenogianni, Journal of Applied Physics . 2010,第10期

机译：通过分子束外延生长的压电InAs（211）B量子点：结构和光学性质
4. Effects of Growth Sequence on Optical and Structural Properties of InAs/GaAs Quantum Dots Grown by Atomic Layer Molecular Beam Epitaxy [C] . J. D. Song, Y. M. Park, J. C. Shin, Symposium on self-organized processes in semiconductor heteroepitaxy . 2004

机译：生长序列对由原子层分子束外延生长的INAS / GaAs量子点光学和结构性能的影响
5. Microstructural and optical properties of self-assembled quantum dots for optical devices grown by molecular beam epitaxy. [D] . Perez-Paz, Maria Noemi. 2005

机译：通过分子束外延生长的光学器件的自组装量子点的微观结构和光学性质。
6. Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy [O] . M Henini 2006

机译：分子束外延生长量子点异质结构的性质及应用
7. Comparison of radiative and structural properties of 1.3 μm InxGa(1−x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties [O] . A. Passaseo, M. De Vittorio, M. T. Todaro, 2003

机译：由金属化学气相沉积和分子束外延生长的量子点激光结构的辐射和结构性能的辐射和结构性能的比较：对激光特性的影响

Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy

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