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首页> 外文会议>2010 IEEE Radiation Effects Data Workshop >Radiation Testing a Very Low-Noise RHBD ASIC Electrometer
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Radiation Testing a Very Low-Noise RHBD ASIC Electrometer

机译：辐射测试超低噪声RHBD ASIC静电计

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摘要

We report the results of Single Event Effect (SEE) and Total Integrated Dose (TID) testing of a very-low-noise six-channel electrometer Application Specific Integrated Circuit (ASIC) constructed through the MOSIS service using the ON Semiconductor C5N process. The ASICs were designed using Radiation Hard By Design (RHBD) layout rules, and TID mitigation strategies. This testing provides a verification that the device does not show latch-up behavior, and that performance is not unduly compromised by TID. The SEE testing, using heavy ions, took place at the Single Event Effects Facility at Texas A&M University using the 24.8~MeV/u beam with ions Ar, Kr, and Xe giving a range of Linear Energy Transfer (LET) at the device of 7.5-63.5 MeV cm2/mg. No latch-ups were seen even at an elevated temperature (30C). TID testing using protons was conducted at the Indiana University Cyclotron Facility on the Radiation Effects Research Program RERS2 beamline. Parts were tested to a total dose of 300 krad(Si). As these ASICs are constructed using CMOS technology there will be no Enhanced Low Dose Rate Sensitivity (ELDRS)
机译：我们报告了通过安森美半导体C5N流程通过MOSIS服务构建的超低噪声六通道静电计专用集成电路（ASIC）的单事件效应（SEE）和总集成剂量（TID）测试的结果。 ASIC是使用“辐射硬设计”（RHBD）布局规则和TID缓解策略设计的。此测试可验证该设备没有显示闩锁行为，并且不会因TID过度影响性能。使用重离子的SEE测试在德克萨斯A＆M大学的单事件效应设施中进行，使用24.8〜MeV / u离子束与Ar，Kr和Xe离子在设备上进行一系列线性能量转移（LET）。 7.5-63.5 MeV cm2 / mg。即使在高温（30℃）下也没有看到闩锁现象。印第安纳大学回旋加速器设施在辐射效应研究计划RERS2射线线上进行了质子的TID测试。测试零件的总剂量为300 krad（Si）。由于这些ASIC是使用CMOS技术构建的，因此不会有增强的低剂量率灵敏度（ELDRS）

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