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首页> 外文会议>Conference on optical microlithography XXIV >Supreme lithographic performance by simple mask layout based on lithography and layout co-optimization
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Supreme lithographic performance by simple mask layout based on lithography and layout co-optimization

机译：通过基于光刻的简单掩模版图和版图共同优化，可实现卓越的光刻性能

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摘要

A method to resolve 20nm node of SRAM contact layer whose minimum pitch is 90nm with enough process latitude is shown. To achieve the target by single exposure under condition ofArF and 1.35 ofNA a way to optimize lithography parameters and layout parameters simultaneously is applied that is called co-optimization. At first the memory cell is optimized from several viewpoints of device and lithography, and then the entire memory cell block including the array circuit is optimized. It proves that combination of co-optimization and insertion of SRAF works very well considering the appropriate printed shape required by the device layout. The co-optimization is compared to such a conventional method as OPC. The performance is better than conventional OPC. Especially the MEFF is much better and the evaluation to find the mechanism is shown. It proves that complex patterns with many fragments make MEEF higher. The superior characteristics of co-optimization are analyzed by the result of Linear Programming that can find the strict solution. The pixel source shape has become almost same as one by co-optimization. The solution is achieved by binary mask with simple patterns and the simple source shape. It is crucial for COO.
机译：给出了一种解决方法，该方法可解决具有最小工艺间距的最小间距为90nm的SRAM接触层的20nm节点。为了在ArF和NA为1.35的条件下通过单次曝光实现目标，采用了一种同时优化光刻参数和布局参数的方法，称为协同优化。首先，从器件和光刻的几个角度对存储单元进行优化，然后对包括阵列电路在内的整个存储单元块进行优化。事实证明，考虑到设备布局所要求的适当印刷形状，SRAF的协同优化和插入的结合非常有效。将共同优化与诸如OPC的常规方法进行比较。性能优于传统的OPC。尤其是MEFF更好，并显示了寻找机理的评估。它证明了具有许多片段的复杂模式使MEEF更高。通过线性规划的结果分析了共同优化的优越特性，可以找到严格的解决方案。通过共同优化，像素源形状几乎与一种形状相同。该解决方案是通过具有简单图案和简单源形状的二进制掩码实现的。这对首席运营官至关重要。

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