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Proof-of-concept gallium-nitride power electronic converter design for HEV energy management application

机译:用于混合动力汽车能源管理应用的概念验证氮化镓功率电子转换器设计

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The aim of this paper is to compare the switching behavior of GaN switches with state of the art Si MOSFETs. Associated parameters in determining the power dissipation of a switch are initially discussed and compared between commercial GaN and Si switches. The Spice models of switches provided by the manufacturer are used to simulate a typical half-bridge DC-DC converter and analyze the switching behavior, loss analysis and converter efficiency of the circuit. High switching loss generally due to the slow switching of power devices, limits the key power conversion figure of merit (FOM) of efficiency × density/cost. The possible contribution of GaN power transistors in high-voltage/high-frequency applications with respect to improvement of the aforementioned FOM is the main scheme of this paper.
机译:本文的目的是比较GaN交换机与现有技术SI MOSFET的切换行为。最初讨论并比较商业GaN和Si交换机的确定在确定开关的功耗时的相关参数。制造商提供的开关的Spice型号用于模拟典型的半桥DC-DC转换器,并分析电路的开关行为,损耗分析和转换器效率。高开关损耗一般由于电源设备的慢速切换,限制了效率×密度/成本的功率(FOM)的关键功率转换图。 GaN功率晶体管在高压/高频应用中的可能贡献相对于上述FOM的改进是本文的主要方案。

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