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Fabrication and Characterization of A Novel Fully Self-Aligned Split-Gate Sonos Memory Device

机译：一种新型全自自对准闸门SONOS存储装置的制造与表征

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A novel low-power fully self-aligned split-gate silicon-oxide-nitride-oxide-silicon (SONOS) flash memory with “memory-last” configuration has been fabricated for the first time at 90-nm node. Firstly, the fabrication sequence is introduced. Then, the operations of unit cell are presented and the transfer characteristics are also experimentally demonstrated. It was revealed that, a wider VTHwindow can be obtained in the memory gate (MG) transistor, although it exhibits a slightly small VTH. However, VTHof selected gate (SG-) transistor is still too large for low-power applications. This is ascribed to the inappropriate source line (SL-) halo, arsenic implantations, and thermal budget, which induces a high threshold voltage locally at SL-side. However, it still proved that this novel split-gate SONOS memory is very promising for low-power applications.
机译：在90-NM节点下，首次制造了一种新颖的低功耗完全自对准分流栅极氧化栅氧化硅 - 氮化物 - 氧化硅（SONOS）闪存，其具有“存储器 - 最后”配置。首先，引入制造序列。然后，提出了单元电池的操作，并且还在实验上证明传送特性。据透露，宽v th 窗口可以在存储器门（Mg）晶体管中获得，尽管它呈现出略微小的V th 。但是，V. th 对于低功耗应用，所选门（SG-）晶体管仍然太大。这归因于不适当的源线（SL-）光环，砷植入和热预算，其在SL侧引起局部地局部地局部地引起高阈值电压。但是，它仍证明，这种新颖的Split门SONOS存储器对于低功耗应用非常有前途。

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