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首页> 外文会议>IEEE MTT-S International Microwave Symposium >Design of a X-band GaN oscillator: from the low frequency noise device characterization and large signal modeling to circuit design
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Design of a X-band GaN oscillator: from the low frequency noise device characterization and large signal modeling to circuit design

机译：X波段GaN振荡器的设计：从低频噪声器件表征和大信号建模到电路设计

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摘要

Although GaN technologies were initially developed for solid state source amplifiers, it was recently demonstrated that AlGaN/GaN HEMT transistors were also suitable for low noise applications such as LNA [1]. The frequency synthesis is not yet widely explored for these technologies. In this paper the design of a low phase noise X-Band oscillator is proposed. The low frequency noise performance and the residual phase noise, as well as dynamic S-parameters were carried out on AlGaN/GaN HEMT grown on SiC. A large-signal modeling technique is also presented. The reduced complexity and the good accuracy of our large signal model permits an efficient circuit design, without intensive knowledge of the technological device parameters. These characterization and modeling tools are used for the design of an 1-stage oscillator working at 10 GHz delivering 20dBm.
机译：尽管最初为固态源放大器开发了GaN技术，但最近展示了AlGaN / GaN HEMT晶体管也适用于LNA的低噪声应用[1]。对于这些技术尚未探索频率合成。在本文中，提出了低相位噪声X波段振荡器的设计。在SiC上生长的AlGaN / GaN HEMT，对低频噪声性能和残留相位噪声以及动态S参数进行了噪声性能。还提出了一种大信号建模技术。大量信号模型的复杂性降低和良好准确性允许高效的电路设计，无需强化技术设备参数。这些表征和建模工具用于设计为10GHz的1级振荡器，输送20dBm。

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