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首页> 外文会议>IEEE MTT-S International Microwave Symposium >Time Domain Poly-Harmonic Distortion Models of RF Transistors and its Extraction using A Hybrid Passive/Active Measurement Setup
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Time Domain Poly-Harmonic Distortion Models of RF Transistors and its Extraction using A Hybrid Passive/Active Measurement Setup

机译：使用混合无源/有源测量设置的RF晶体管的时域多谐波失真模型及其提取

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摘要

This paper presents a novel behavioral model of RF transistors under periodic stimulus that is mathematically equivalent to frequency domain Poly-Harmonic Distortion (PHD) models but is defined instead in the time domain. Given a fixed fundamental frequency for a periodic stimulus, a time domain PHD (TD-PHD) model that describes this periodic behavior consists of two nonlinear functions, each describing the large-signal response at one of the two ports of the RF transistor. In this model, the response at each port at any given time is a nonlinear time-invariant function of the stimulus at both ports throughout its entire RF period. Using a two-port hybrid passive/active multi-harmonic load-pull measurement setup, a 10W GaN packaged transistor biased in class AB is measured with a Nonlinear Vector Network Analyzer (NVNA). The predictive performance of the extracted model is validated against a power amplifier design that uses this RF transistor.
机译：本文介绍了在定期刺激下的RF晶体管的新行为模型，其在数学上等同于频域多谐波失真（PHD）模型，而是在时域中定义。给定周期性刺激的固定基本频率，描述该周期性行为的时域PHD（TD-PHD）模型由两个非线性函数组成，每个非线性函数组成，每个函数描述RF晶体管的两个端口之一的大信号响应。在该模型中，在任何给定时间的每个端口处的响应是在其整个RF时段的两个端口处的刺激的非线性时间不变函数。使用双端口混合动力/有源多谐波负载测量设置，用非线性矢量网络分析仪（NVNA）测量AB类中偏置的10W GaN封装晶体管。提取模型的预测性能与使用该RF晶体管的功率放大器设计验证。

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