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首页> 外文会议>IEEE International Electron Devices Meeting >Highly beneficial organic liner with extremely low Thermal stress for fine Cu-TSV in 3D-integration
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Highly beneficial organic liner with extremely low Thermal stress for fine Cu-TSV in 3D-integration

机译：具有极低热应力的高效益有机衬里，可用于3D集成中的精细Cu-TSV

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The constructive role played by the Thermal-chemical vapor deposited (CVD) organic polyimide (PI) liner in the Cu-TSVs with diameter or width (Φ) varying from 3 μm to 30 μm has been studied meticulously for its thermal stability, leakage current (LC), capacitance, TSV-chain resistance, stress absorbing ability, and the Si-lattice distortion arising from thermo-mechanical stress (TMS). The measured LC values for the CVD deposited PI liner is in the order of 10 to 10 A, which is on par with the value obtained for the conventional SiO liner. The extremely low modulus value of PI liner helps not only to reduce the amount of Cu extrusion, but also maintain an uniform Cu-extrusion. We were able to achieve a conformal deposition of PI liner even in Φ = 3 μm via having the aspect ratio of 10 with the step coverage values of more than 0.8 (80%) at the TSV bottom corner. It was found that the d-space changing and thus the lattice stress is nearly five times smaller for the TSV with PI liner (~200 MPa) than for the TSV with SiO liner (~1000 MPa). Nearly zero-degradation of PI liner was confirmed from C1s, O1s, and N1s core-level x-ray photoelectron spectra taken before and after annealing at 400 °C. We obtained the resistance value of as low as 18 mΩ per 10 μm-width TSV with 500 nm-thick PI liner fabricated on 12-inch wafer.
机译：仔细研究了热化学气相沉积（CVD）有机聚酰亚胺（PI）衬里在直径或宽度（Φ）从3μm到30μm不等的Cu-TSV中所起的建设性作用（LC），电容，TSV链电阻，应力吸收能力以及由热机械应力（TMS）引起的Si晶格变形。 CVD沉积的PI衬里的测量LC值约为10至10 A，与常规SiO衬里获得的值相当。 PI衬里的极低模量值不仅有助于减少Cu的挤出量，而且还可以保持均匀的Cu挤出。通过在TSV底角处具有10的长宽比和大于0.8（80％）的台阶覆盖值，即使在Φ= 3μm中，我们也能够实现PI衬里的保形沉积。已发现，带有PI衬里的TSV（〜200 MPa）的d空间变化和晶格应力几乎比带有SiO衬里的TSV（〜1000 MPa）小五倍。从在400°C退火之前和之后拍摄的C1s，O1s和N1s核心能级X射线光电子能谱确认PI衬里几乎零降解。我们在12英寸晶圆上制造了500 nm厚的PI衬里，每10μm宽的TSV的电阻值低至18mΩ。

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