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首页> 外文会议>China Semiconductor Technology International Conference >Basic principles of chemical vapor deposition technique at atmospheric pressure for synthesis of cadmium telluride and its implementation as diode
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Basic principles of chemical vapor deposition technique at atmospheric pressure for synthesis of cadmium telluride and its implementation as diode

机译：常压化学气相沉积技术合成碲化镉的基本原理及其作为二极管的实现

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摘要

This paper is focused on the study of basic principles of a chemical vapor deposition technique. Already established the theoretical deposition parameters, we obtain cadmium telluride film at different temperatures over silicon and glass substrates. It was found that the structural and electrical properties are greatly influenced by the substrate and sources temperature: the grain size increasing with the deposition temperature as well as the chemical composition. The films were placed at thermal treatment at 500??C in a tellurium/argon atmosphere in order to increase the tellurium composition on the film. We study the heterojunction formed between CdTe p-type / Si n-type.
机译：本文重点研究化学气相沉积技术的基本原理。已经建立了理论沉积参数，我们获得了在硅和玻璃基板上不同温度下的碲化镉薄膜。已经发现，结构和电性能受衬底和源温度的影响很大：晶粒尺寸随沉积温度以及化学成分的增加而增加。将膜置于碲/氩气氛中在500℃的温度下进行热处理，以增加膜上的碲组成。我们研究了CdTe p型/ Si n型之间形成的异质结。

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