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Effective approaches to improve Au etching process performance in MEMS devices

机译：改善MEMS器件中金蚀刻工艺性能的有效方法

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A method to improve pattern critical dimension (CD) and reduce the metal residue level during gold (Au) and chrome (Cr) wet etch processes in MEMS devices is investigated. Instead of traditional single-step wet etch process, a multi-step wet etch method is used to etch Au with the etchant formulated by potassium iodide, iodine and deionized water (KI/I2/H2O). Compared with the single step wet etching process, the Au CD uniformity has been significantly improved from 10 um to 3.5 um in the experiment. Furthermore the Au undercut uniformity has been improved to 2 um which meets the requirements of mass production. Different etchant concentrations are also investigated to study the correlation between etch rate and potassium iodide concentration, and the efficiency of metal residue removal. In the chemical conditions of I2: KI: H2O=4:15:81, it is found that higher KI concentration brings AuI faster dissolution rate and metal residues are completely removed.
机译：研究了一种在MEMS器件中的金（Au）和铬（Cr）湿法刻蚀工艺中改善图案临界尺寸（CD）并降低金属残留量的方法。代替传统的单步湿法刻蚀工艺，使用了多步湿法刻蚀方法来腐蚀由碘化钾，碘和去离子水（KI / I2 / H2O）配制的腐蚀剂。与单步湿法蚀刻工艺相比，实验中的Au CD均匀性从10 um显着提高到3.5 um。此外，Au底切的均匀性已提高到2 um，可以满足批量生产的要求。还研究了不同的蚀刻剂浓度，以研究蚀刻速率和碘化钾浓度之间的相关性，以及去除金属残留物的效率。在I2：KI：H2O = 4：15：81的化学条件下，发现较高的KI浓度可使AuI更快地溶解，并且金属残留物被完全去除。

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