BIMOS transistor in thin silicon film and new solutions for ESD protection in FDSOI UTBB CMOS technology

机译：薄硅膜中的Bimos晶体管和FDSOI UTBB CMOS技术的ESD保护解决方案

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

The purpose of this study is to evaluate the ESD protection behavior using BIMOS transistors integrated in ultrathin silicon film for 28 nm FDSOI UTBB high-k metal gate technology. Using as a reference our measurements in hybrid bulk structures we extend the BIMOS design towards the ultrathin silicon film. Evaluations are done based on 3D TCAD simulation with standard physical models using ACS method and quasi-static DC stress (AVS method).

机译：本研究的目的是评估使用集成在超薄硅膜中的BIMOS晶体管的ESD保护行为，用于28 nm FDSOI UTBB高k金属栅极技术。用作参考我们在混合体积结构中的测量，我们将BIMOS设计扩展到超薄硅膜。使用ACS方法和准静态DC应力（AVS方法）基于具有标准物理模型的3D TCAD模拟来完成评估。

著录项

来源
《Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon》|2015年||共4页
会议地点
作者
Galy Ph; Athanasiou S.; Cristoloveanu S.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类通信;
关键词
BIMOS transistor; CMOS; ESD protection; FDSOI;

机译：Bimos晶体管;CMOS;ESD保护;FDSOI;

相似文献

外文文献
中文文献
专利

1. BIMOS transistor solutions for ESD protection in FD-SOI UTBB CMOS technology [J] . Galy Philippe, Athanasiou S., Cristoloveanu S. Solid-State Electronics . 2016,第JANaPTaB期

机译：FD-SOI UTBB CMOS技术中用于ESD保护的BIMOS晶体管解决方案
2. Topology and design investigation on thin film silicon BIMOS device for ESD protection in FD-SOI technology [J] . Galy Ph., de Conti L., Delahaye G., Microelectronics & Reliability . 2019,第Sepa期

机译：FD-SOI技术中用于ESD保护的薄膜硅BIMOS器件的拓扑和设计研究
3. Symmetrical ESD trigger and pull-up using BIMOS transistor in advanced CMOS technology [J] . Ph. Galy, J. Bourgeat, J. Jimenez, Microelectronics & Reliability . 2012,第9a10期

机译：使用先进CMOS技术的BIMOS晶体管进行对称ESD触发和上拉
4. BIMOS transistor in thin silicon film and new solutions for ESD protection in FDSOI UTBB CMOS technology [C] . Galy Ph, Athanasiou S., Cristoloveanu S. 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon . 2015

机译：薄膜中的BIMOS晶体管和FDSOI UTBB CMOS技术中用于ESD保护的新解决方案
5. Analysis and modeling of parasitic effects in advanced silicon-on-insulator CMOS technologies, including nonclassical ultra-thin-body transistors. [D] . Yang, Ji-Woon. 2004

机译：包括非经典超薄晶体管在内的高级绝缘体上CMOS技术的寄生效应分析和建模。
6. CMOS-Compatible Silicon Nanowire Field-Effect Transistor Biosensor: Technology Development toward Commercialization [O] . Duy Phu Tran, Thuy Thi Thanh Pham, Bernhard Wolfrum, 2018

机译：CMOS兼容的硅纳米线场效应晶体管生物传感器：面向商业化的技术发展
7. Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating [O] . Kaname Imokawa, Takayuki Kurashige, Akira Suwa, 2020

机译：通过使用化学溶液涂层的激光掺杂在Si薄膜晶体管中制造CMOS逆变器

BIMOS transistor in thin silicon film and new solutions for ESD protection in FDSOI UTBB CMOS technology

摘要

著录项

相似文献

相关主题

期刊订阅