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首页> 外文会议>IEEE Energy Conversion Congress and Exposition >Analysis and Gate Driver Design Considerations of 10 kV SiC MOSFETs under Flashover Fault due to Insulation Failure
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Analysis and Gate Driver Design Considerations of 10 kV SiC MOSFETs under Flashover Fault due to Insulation Failure

机译：绝缘故障引起的闪络故障下的10 kV SiC MOSFET的分析和栅极驱动器设计注意事项

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The behavior of 10 kV SiC MOSFETs during a flashover fault condition is investigated comprehensively. A larger turn-off gate resistance Rg,off is recommended for 10 kV SiC MOSFETs without Kelvin source to avoid very asymmetrical gate resistance, while a small Rg,off is recommended for 10 kV SiC MOSFETs with Kelvin source. Guidelines regarding gate loop inductance and selecting an external capacitor across gate and source terminal are also provided. 10 kV SiC MOSFETs have much higher energy loss under flashover fault compared to typical short circuit faults. The required response time for short circuit protection to safely clear flashover fault should be at least 350 ns shorter than the response time designed to clear conventional short circuit faults.
机译：全面研究了10 kV SiC MOSFET在闪络故障条件下的行为。较大的关断栅极电阻R g，off 建议将其用于不带开尔文源极的10 kV SiC MOSFET，以避免极不对称的栅极电阻，而较小的R g，off 建议用于带开尔文源的10 kV SiC MOSFET。还提供了有关栅极环路电感以及在栅极和源极端子之间选择外部电容器的指南。与典型的短路故障相比，在闪络故障下10 kV SiC MOSFET具有更高的能量损耗。安全清除闪络故障所需的短路保护所需的响应时间应比清除常规短路故障所需的响应时间至少短350 ns。

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