Heteroepitaxial Lattice Mismatch Stress Relaxation in Nonpolar and Semipolar GaN by Dislocation Glide

机译：非极性和半极性GaN中位错滑行的异质外延晶格失配应力松弛

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

Lattice mismatch stresses in heteroepitaxial (In,Al,Ga)N structuresbased on nonpolar and semipolar orientations of GaN can result inrelaxation via dislocation glide as a result of shear stresses oninclined slip planes, with important consequences foroptoelectronic device design.

机译：异质外延（In，Al，Ga）N结构中的晶格失配应力基于GaN的非极性和半极性取向可以导致剪切应力作用下，位错滑动引起的松弛倾斜的滑架，对光电器件设计。

著录项

来源
《SiGe, Ge, and related compounds: materials, processing, and devices symposium;Electrochemical Society meeting》|2012年|797-800|共4页
会议地点
作者
E.C. Young; J.S. Speck;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Stress relaxation in semipolar and nonpolar Ⅲ-nitride heterostructures by formation of misfit dislocations of various origin [J] . Smirnov A. M., Young E. C., Bougrov V. E., Journal of Applied Physics . 2019,第24期

机译：通过形成多种原产地的错位脱位，在半极和非球形Ⅲ-氮化物异质结构中的应力松弛
2. Effect of the lattice mismatch on threading dislocations in heteroepitaxial GaN layers revealed by X-ray diffraction [J] . Romanitan Cosmin, Mihalache Iuliana, Tutunaru Oana, Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2021,第1期

机译：X射线衍射揭示杂交GaN层杂交脱位对杂交脱位的影响
3. Misfit dislocation formation at heterointerfaces in (AI,ln)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates [J] . F. Wu, A. Tyagj, E. C. Young, Journal of Applied Physics . 2011,第3期

机译：在半极性自立式GaN衬底上生长的（AI，ln）GaN异质外延层中异质界面处形成失配位错
4. Heteroepitaxial Lattice Mismatch Stress Relaxation in Nonpolar and Semipolar GaN by Dislocation Glide [C] . E. C. Young, J. S. Speck Meeting of the Electrochemical Society . 2012

机译：通过位错滑行的非极性和SemipoLar GaN中的异质轴晶格不匹配应激松弛
5. Observations on the kinetics of relaxation in epitaxial films grown on conventional and compliant substrates: A continuum simulation of dislocation glide near an interface [D] . Kutka, Robert Vincent. 1998

机译：对常规兼柔性基材生长的外延薄膜放松动力学的观察：界面附近的位错滑动的连续模拟
6. The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study [O] . Andrian V. Kuchuk, Serhii Kryvyi, Petro M. Lytvyn, 2016

机译：在原始GaN（0001）衬底上生长的GaN / AlN超晶格中应变弛豫的特殊性：XRD和AFM的比较研究
7. Recent Performance of Nonpolar/Semipolar/Polar GaN-Based Blue Emitting Devices and GaN bulk Crystal Growth [O] . Nakamura Shuji 2007

机译：非极性/半极性/极性GaN基蓝色发射器件的最新性能和GaN块状晶体的生长

Heteroepitaxial Lattice Mismatch Stress Relaxation in Nonpolar and Semipolar GaN by Dislocation Glide

摘要

著录项

相似文献

相关主题

期刊订阅