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Nonvolatile Circuits-Devices Interaction for Memory, Logic and Artificial Intelligence

机译：非易失性电路-用于存储器，逻辑和人工智能的设备交互

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Emerging nonvolatile memory (eNVM) have aroused extensive attention due to their low power and high speed. Recent advances have further moved eNVM to the forefront as key enablers of nonvolatile logics (nvLogics) for IoT devices and computing-in-memory (CIM) for AI chips. In this paper, we firstly examine the circuit-device-interaction (CDI) issues to implement high-performance memory macro. Then we review examples of emerging eNVM-based nvLogics for nonvolatile processors and CIM macro for AI chips with an emphasis on the challenges required CDI.

机译：新兴的非易失性存储器（eNVM）由于其低功耗和高速度而引起了广泛的关注。最新的进展将eNVM进一步推向了最前沿，成为IoT设备的非易失性逻辑（nvLogics）和AI芯片的内存计算（CIM）的关键支持者。在本文中，我们首先研究实现高性能存储器宏的电路设备交互（CDI）问题。然后，我们回顾了新兴的基于eNVM的非易失性处理器和AI芯片的CIM宏示例，重点介绍了CDI所面临的挑战。

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《IEEE Symposium on VLSI Technology》|2018年|171-172|共2页
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Chun-Meng Dou; Wei-Hao Chen; Cheng-Xin Xue; Wei-Yu Lin; Wei-En Lin; Jun-Yi Li; Huan-Ting Lin; Meng-fan Chang;
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Nonvolatile memory; Common Information Model (electricity); Memory management; Artificial intelligence; Microprocessors; Program processors;

机译：非易失性存储器;公共信息模型（电）;存储器管理;人工智能;微处理器;程序处理器;

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1. CHALLENGE OF MTJ-BASED NONVOLATILE LOGIC-IN-MEMORY ARCHITECTURE FOR DARK-SILICON LOGIC LSI [J] . TAKAHIRO HANYU SPIN . 2013,第4期

机译：基于MTJ的深色硅逻辑LSI非易失性逻辑内存架构的挑战
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机译：浮动栅极操纵石墨烯 - 黑色磷异质结，用于非易失性Ambipolar肖特基结回忆，记忆逆变电路和逻辑整流器
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机译：采用1×nm CMOS逻辑技术的1-kb FinFET介电电阻随机存取存储器阵列，用于嵌入式非易失性存储器应用
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机译：非易失性电路 - 器件对记忆，逻辑和人工智能的交互
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机译：寻求解释：绑架逻辑，科学哲学和人工智能。
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机译：铁电栅极场效应晶体管的最新进展及其在非易失性逻辑和FeNAND闪存中的应用
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机译：紧凑型FEFET电路构建块，用于快速高效的非易失性逻辑内存

Nonvolatile Circuits-Devices Interaction for Memory, Logic and Artificial Intelligence

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