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首页> 外文会议>IEEE Symposium on VLSI Technology >Differentiated Performance and Reliability Enabled by Multi-Work Function Solution in RMG Silicon and SiGe MOSFETs
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Differentiated Performance and Reliability Enabled by Multi-Work Function Solution in RMG Silicon and SiGe MOSFETs

机译：RMG硅和SiGe MOSFET中的多功函数解决方案可实现差异化的性能和可靠性

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We report for the first time that replacement metal gate (RMG) work function metal (WFM) modulates the interface defects in Silicon and SiGe MOSFETs. Changing the effective work function (eWF) towards nFET band edge provides lower interface defects and higher mobility than eWF near the pFET band edge for both Si and SiGe substrates. Reducing the electric field across the dielectric (via eWF) improves bias temperature instability (BTI) for both n & pMOSFETs beyond expectation. Breakdown voltage increases and gate leakage decreases with increasing eWF for both n & pMOSFETs. Therefore, multi-Vt MOSFETs by RMG metal gate exhibit differentiated reliability as well as differentiated performance for both Si and SiGe channel materials.
机译：我们首次报告，替代金属栅极（RMG）功函数金属（WFM）可以调制硅和SiGe MOSFET中的界面缺陷。对于Si和SiGe衬底，将有效功函数（eWF）朝nFET带边缘改变比在pFET带边缘附近的eWF提供更低的界面缺陷和更高的迁移率。降低介电层上的电场（通过eWF）可改善n和pMOSFET的偏置温度不稳定性（BTI），超出了预期。对于n和pMOSFET，随着eWF的增加，击穿电压增加，栅极泄漏减小。因此，RMG金属栅极的多Vt MOSFET对于Si和SiGe沟道材料都表现出不同的可靠性以及不同的性能。

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