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Zero-defect sputter deposition metallization method for high-volume manufacturing of grafted multilayer thin film modules

机译:零缺陷溅射沉积金属化方法,用于嫁接多层薄膜模块的高批量生产

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The implementation of constant-power power supplies communicating with a magnet control system has been demonstrated to be an optimum way to uniformly deposit metal from an inline sputter system. This is an inline DC magnetron sputter deposition process. High equipment reliability (99% uptime), low defect levels (4 p.p.m.), and the use of 12-mm-thick targets for metallizing 3000 ft/sup 2/ of substrate area between cathode changes have been achieved. The system is configured to provide layered metal systems with discrete or phased interfaces. Plasma optimization via real-time magnetron control and magnetic field suppression at the beginning of the target life has enabled deposit thickness (and sheet resistivity) variation to be automatically controlled to +or-5% over the 435-in/sup 2/ deposition area throughout the life of the targets.
机译:已经证明了与磁体控制系统通信的恒功率电源的实现是从内联溅射系统均匀沉积金属的最佳方式。这是一个内联的DC磁控溅射沉积过程。高设备可靠性(<99%正常运行时间),低缺陷水平(> 4 p.M.),并且已经实现了使用12mm厚的用于金属化3000ft / sup 2 /在阴极变化之间的衬底区域的目标。该系统被配置为提供具有离散或相控界面的分层金属系统。通过实时磁控管控制和目标寿命开始的磁场抑制等离子体优化使得在435英寸/ SUP 2 /沉积区域上会使沉积物厚度(和薄层电阻率)变化自动控制到+或-5%整个目标的生活中。

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