Strained-layer InGaAs-GaAs-AlGaAs buried heterostructure lasers by three-step selective-area metalorganic chemical vapor deposition

机译：应变层Ingaas-GaAs-Algaas通过三步选择性区域金属化学气相沉积掩埋异质结构激光器

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In this talk, we present the fabrication process and laser results for narrow stripe, index-guided strained layer lasers with low threshold currents and good spectral characteristics. Threshold currents as low as 11 mA for uncoated devices and single longitudinal mode operation are obtained for the three step growth buried heterostructure laser, indicating high quality device performance for devices fabricated with an AlGaAs regrowth step.

机译：在这次谈话中，我们介绍了具有低阈值电流和良好光谱特性的窄条纹，指导引导的应变层激光器的制造过程和激光结果。对于未涂覆器件的阈值电流，对于未涂覆的装置，并且为三步生长掩埋异质结构激光获得单个纵向模式操作，表明用ALGAAS再生步骤制造的装置的高质量器件性能。

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《IEEE Lasers and Electro-Optics Society Annual Meeting》|1993年||共2页
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Cockerill T.M.; Forbes D.V.; Institute of Electric and Electronic Engineer;
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中图分类自动化技术、计算机技术;
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1. Strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure quantum-well lasers by three-step selective-area metalorganic chemical vapor deposition [J] . Cockerill T.M., Forbes D.V. IEEE Journal of Quantum Electronics . 1994,第2期

机译：三步选择区金属有机化学气相沉积法制备应变层InGaAs-GaAs-AlGaAs埋层异质结构量子阱激光器
2. A strained-layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LED by selective-area metalorganic chemical vapor deposition [J] . Osowski M.L., Cockerill T.M. IEEE Photonics Technology Letters . 1994,第11期

机译：选择性区域金属有机化学气相沉积的应变层InGaAs-GaAs-AlGaAs单量子阱宽光谱LED
3. Strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure lasers with nonabsorbing mirrors by selective-area MOCVD [J] . Lammert R.M., Smith G.M. Electronics Letters . 1995,第13期

机译：选择性区域MOCVD的非吸收镜应变层InGaAs-GaAs-AlGaAs埋藏异质结构激光器
4. Strained-layer InGaAs-GaAs-AlGaAs buried heterostructure lasers by three-step selective-area metalorganic chemical vapor deposition [C] . Cockerill, T.M., Forbes, . 1993

机译：三步选择区金属有机化学气相沉积法制备应变层InGaAs-GaAs-AlGaAs埋层异质结构激光器
5. Aluminum gallium arsenide-gallium arsenide-indium gallium arsenide-indium arsenide quantum dot coupled to quantum well heterostructure lasers by low-pressure metalorganic chemical vapor deposition. [D] . Chung, Theodore. 2003

机译：铝砷化镓-砷化镓-砷化镓-砷化铟量子点通过低压金属有机化学气相沉积与量子阱异质结构激光器耦合。
6. Wafer-scale and selective-area growth of high-quality hexagonal boron nitride on Ni(111) by metal-organic chemical vapor deposition [O] . Hokyeong Jeong, Dong Yeong Kim, Jaewon Kim, -1

机译：金属有机化学气相沉积法在Ni（111）上高质量地生长六方氮化硼的晶片规模和选择性区域
7. Microstructural and Optical Properties of AlxGa1-xN/GaN Heterostructure Thin Films Grown on Si(111) Substrate by Plasma Assisted Metalorganic Chemical Vapor Deposition Method [O] . Heri Sutanto, Agus Subagio, Pepen Arifin, 2007

机译：等离子体辅助金属有机化学气相沉积法在Si（111）衬底上生长AlxGa1-xN / GaN异质结构薄膜的微观结构和光学性质
8. GaInAsP/InP 1.35 Micrometer Double Heterostructure Laser Grown on SiliconSubstrate by Metalorganic Chemical Vapor Deposition [R] . Mobarhan, K., Jelen, C., Kolev, E., 1993

机译：GaInasp / Inp 1.35微米双异质结构激光器通过金属有机化学气相沉积在硅基板上生长

Strained-layer InGaAs-GaAs-AlGaAs buried heterostructure lasers by three-step selective-area metalorganic chemical vapor deposition

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