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首页> 外文会议>International conference on high temperature materials chemistry >Comparison of the Oxidation Behaviour of Silicon Nitride Hot-Pressed with Neodymium Oxide and a HIPped Silicon Nitride
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Comparison of the Oxidation Behaviour of Silicon Nitride Hot-Pressed with Neodymium Oxide and a HIPped Silicon Nitride

机译：用氧化钕和氮化硅氮化硅热熔氧化行为的比较及氮化硅

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摘要

This paper reports the oxidation of a dense hot-pressed Si_3N_4 with a Nd-N-apatite grain-boundary phase. This material was prepared in-house and the results of an oxidation study in the range 1273 to 1648 K are discussed and compared with those of a low additive containing HIPped Si_3N_4. The results highlight the adverse effects that a rare earth based grain-boundary phase has on the oxidation resistance of Si_3N_4. Significant oxidation of hot-pressed Si_3N_4 was shown to occur at temperatures as low as 1373K, compared to 1843 K for the HIPped Si_3N_4, due to the formation of low melting neodymium silicate glasses. Experiments carried out on a monolithic Nd-N-apatite confirmed that it readily oxidises at 1273K via a two step process. The change in oxidation kinetics of the hot-pressed Si_3N_4 over the test temperature range is therefore discussed in terms of the different events which were shown to have occurred.
机译：本文报道了具有Nd-n-磷灰石晶状边界相的致密热压Si_3N_4的氧化。内部制备该材料，并将氧化研究的氧化研究进行讨论，并与含有含有臀部Si_3N_4的低添加剂的氧化研究进行比较。结果突出了稀土基晶界相对Si_3N_4的抗氧化性的不利影响。由于形成低熔点钕硅酸盐玻璃，所示，在低至1373K的温度下，在低至1373K的温度下，在低至1373k的温度下发生显着氧化。在整体式ND-N-磷灰石上进行的实验证实，它通过两步法逐步氧化1273K。因此，根据测试温度范围内的热压Si_3N_4的氧化动力学的变化是根据所示的不同事件讨论的。

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