首页> 外文会议>International conference on polycrystalline semiconductors >Polycrystalline Silicon Films Produced by Low Pressure Chemical Vapour Deposition for Microswitch Applications; the Stress as Dependent on Deposition Conditions, Doping Type, and Thermal Treatments
【24h】

Polycrystalline Silicon Films Produced by Low Pressure Chemical Vapour Deposition for Microswitch Applications; the Stress as Dependent on Deposition Conditions, Doping Type, and Thermal Treatments

机译:通过低压化学气相沉积生产的多晶硅膜,用于微型开关应用;依赖于沉积条件,掺杂类型和热处理的应力

获取原文

摘要

Polycrystalline silicon (polysilicon) has rapidly become the material of choice for the fabrication of micro electromechanical systems, due to its good electrical and mechanical properties. In this paper, stress measurements were performed in function of the nature of doping atoms, the deposition, and the crystallization conditions. It is found that phosphorous doping, 550 °C deposition temperature, 90 Pa deposition pressure and 850 °C thermal annealing in nitrogen atmosphere, constitute the best compromise for the realization of suspended microstructures like cantilever beams or bridges.
机译:由于其良好的电气和机械性能,多晶硅硅(多晶硅)迅速成为微机电系统的制造的首选材料。在本文中,掺杂原子,沉积和结晶条件的性质的作用中进行应力测量。发现磷掺杂,550℃的沉积温度,90Pa沉积压力和850℃的氮气氛中的热退火构成了实现悬臂梁或桥布如悬浮微结构的最佳折衷。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号