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Microstructural Characterization of TaN Coatings

机译：棕褐色涂料的微观结构特征

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Owing to its high hardness, low electrical resistivity and high thermal stability, tantalum nitride is of great interest as coatings for tools as well as thin films for diffusion barriers in microelectronic devices. TaN thin films are very sensitive to deviation from stoichiometry and this material exists in many different stable or metastable phases. Consequently, the properties of the films (microstructure, hardness, and resistivity) strongly depend on the deposition conditions. Hence, in the reactive sputtering process chosen for this work, the N{sub}2-Ar gas ratio was a major factor influencing the properties of TaN thin films. Microstructural and electrical characterization of tantalum nitride coatings was performed in order to study the influence of the process parameters on the material properties. Microstructure was characterized using different techniques such as X-Ray diffraction, scanning electron, transmission electron and atomic force microscopies.
机译：由于其高硬度，低电阻率和高热稳定性，氮化钽对用于工具的涂料以及微电子器件中的扩散屏障的薄膜具有很大的兴趣。 TAN薄膜对来自化学计量的偏差非常敏感，并且这种材料存在于许多不同的稳定或稳定的阶段。因此，薄膜的性质（微观结构，硬度和电阻率）强烈地取决于沉积条件。因此，在为该工作选择的反应溅射过程中，N {亚} 2-AR气体比是影响TaN薄膜性能的主要因素。进行氮化钽涂层的微观结构和电学表征，以研究工艺参数对材料性质的影响。使用诸如X射线衍射，扫描电子，透射电子和原子力显微镜等不同技术的微观结构表征。

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