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Reducing or eliminating line-end shortening and iso/dense bias by tuning NA and sigma

机译:通过调整NA和Sigma来减少或消除线结束缩短和ISO /密集偏差

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As the critical dimension is reduced, the most severe Optical Proximity Effect (OPE) are the Iso/Dense Bias (IDB) and the Line-End Shortening (LES). Before using an automatic software to correct such effects, it can be interesting to find the Numerical Aperture (NA), Filling Factor ($sigma@) couple which gives the best result in term of reduction of IDB and LES. This study focuses on the behavior of LES and IDB as a function of NA and $sigma on 0.35 micrometer/I-line and 0.25 micrometer/DUV design rules. On both IDB, and LES, interesting results have been obtained. Results obtained for IDB confirm previously published data and show that it is possible to reduce, in a significant manor, the IDB in conventional illumination mode, by taking a suitable NA, $sigma couple. Moreover we emphasize in this paper that $sigma has no significant effect on LES unlike previously published data, and that it is possible to reduce LES to an acceptable level by tuning NA. Regarding the results obtained in this study, it appears to be possible to reduce both IDB and LES by fine tuning NA and $sigma. Effectiveness of serifs and hammerheads in reducing LES is also discussed.
机译:随着临界尺寸减小,最严重的光学邻近效应(OPE)是ISO /致密偏置(IDB)和线端缩短(LES)。在使用自动软件纠正此类效果之前,找到数值孔径(NA),填充因子($ SIGMA @)耦合可能很有意思,这为IDB和LES减少而提供最佳结果。本研究专注于LES和IDB的行为,作为NA和SIGMA的函数0.35微米/ I线和0.25微米/ DUV设计规则。在IDB和LES上,已经获得了有趣的结果。为IDB获得的结果确认了先前发布的数据,并表明可以通过采用合适的NA,$ Sigma夫妇来减少传统照明模式中的IDB。此外,我们强调了本文,即美元对先前公布的数据没有对LES没有显着影响,并且可以通过调整NA来减少LES到可接受的水平。关于在本研究中获得的结果,似乎可以通过微调NA和$ SIGMA来减少IDB和LES。还讨论了Serifs和Hammerhegs在减少LES中的有效性。

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