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Reducing or eliminating line-end shortening and iso/dense bias by tuning NA and sigma

机译:通过调整NA和sigma减少或消除线端缩短和iso / dense偏差

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Abstract: As the critical dimension is reduced, the most severe Optical Proximity Effect (OPE) are the Iso/Dense Bias (IDB) and the Line-End Shortening (LES). Before using an automatic software to correct such effects, it can be interesting to find the Numerical Aperture (NA), Filling Factor ($sigma@) couple which gives the best result in term of reduction of IDB and LES. This study focuses on the behavior of LES and IDB as a function of NA and $sigma on 0.35 micrometer/I-line and 0.25 micrometer/DUV design rules. On both IDB, and LES, interesting results have been obtained. Results obtained for IDB confirm previously published data and show that it is possible to reduce, in a significant manor, the IDB in conventional illumination mode, by taking a suitable NA, $sigma couple. Moreover we emphasize in this paper that $sigma has no significant effect on LES unlike previously published data, and that it is possible to reduce LES to an acceptable level by tuning NA. Regarding the results obtained in this study, it appears to be possible to reduce both IDB and LES by fine tuning NA and $sigma. Effectiveness of serifs and hammerheads in reducing LES is also discussed. !8
机译:摘要:随着临界尺寸的减小,最严重的光学邻近效应(OPE)是Iso / Dense Bias(IDB)和线端缩短(LES)。在使用自动软件校正此类影响之前,找到数值孔径(NA),填充因子($ sigma @)对可能会很有趣,这对降低IDB和LES效果最佳。这项研究的重点是在0.35微米/ I线和0.25微米/ DUV设计规则下,LES和IDB的行为与NA和$ sigma的关系。在IDB和LES上,都获得了有趣的结果。为IDB获得的结果证实了以前发布的数据,并表明可以通过采用适当的NA,$σ夫妇,以显着的方式减少IDB在常规照明模式下的使用。此外,我们在本文中强调,与以前发布的数据不同,$ sigma对LES没有显着影响,并且可以通过调整NA将LES降低到可接受的水平。关于在这项研究中获得的结果,似乎可以通过微调NA和$ sigma来减少IDB和LES。还讨论了衬线和锤头减少LES的有效性。 !8

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