Reactive ion etching of CVD-diamond for sensor devices with a minimum feature size of 100 nm

机译：用于传感器装置的CVD-金刚石的反应离子蚀刻，具有100nm的最小特征尺寸的传感器装置

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In this paper a novel technique for structure definition in CVD- diamond with a minimum feature size of Less than 100 nm is presented. Since this technique utilises only standard process steps and equipment, it can be transfered to various technology lines. To overcome the limitation of an insufficient resolution of conventional lithography, the conformity of a PECVD-deposition was applied to define an adequate masking Layer. Hence the attainable feature size in combination with the outstanding properties of diamond offers a great variety of novel applications in sensor technology.

机译：本文在CVD-菱形中具有小于100nm的最小特征尺寸的CVD-菱形中的新技术。由于该技术仅利用标准工艺步骤和设备，因此可以转移到各种技术线路。为了克服常规光刻分辨率不足的限制，施加PECVD沉积的符合性以限定足够的掩蔽层。因此，可达到的特征尺寸与钻石的出色特性结合使用，在传感器技术中提供了各种各样的新应用。

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《Conference of the IEEE Industrial Electronics Society, Annual》|2000年||共5页
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R. Otterbach; U. Hilleringmann; K. Goser;
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1. Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications [J] . R. Otterbach, U. Hilleringmann, K. Goser, Diamond and Related Materials . 2001,第3aPta1期

机译：用于传感器应用的CVD金刚石中最小特征尺寸小于100 nm的结构
2. Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications [J] . R. Otterbach, U. Hilleringmann, J.T. Horstmann Diamond and Related Materials . 2001,第3a7期

机译：用于传感器应用的CVD金刚石中最小特征尺寸小于100 nm的结构
3. Reactive ion etching of CVD-diamond for piezoresistive pressure sensors [J] . R. Otterbach, U. Hilleringmann Diamond and Related Materials . 2002,第3a6期

机译：用于压阻式压力传感器的CVD金刚石的反应性离子蚀刻
4. Reactive ion etching of CVD-diamond for sensor devices with a minimum feature size of 100 nm [C] . R. Otterbach, U. Hilleringmann, K. Goser Conference of the IEEE Industrial Electronics Society, Annual . 2000

机译：用于传感器装置的CVD-金刚石的反应离子蚀刻，具有100nm的最小特征尺寸的传感器装置
5. Reactive ion etching of crystalline silicon carbide and fabrication of silicon carbide devices. [D] . Yih, Pei Haur. 1994

机译：结晶碳化硅的反应离子刻蚀和碳化硅器件的制造。
6. Activity Recognition for IoT Devices Using Fuzzy Spatio-Temporal Features as Environmental Sensor Fusion [O] . Miguel Ángel López Medina, Macarena Espinilla, Cristiano Paggeti, 2019

机译：使用模糊时空特征作为环境传感器融合的物联网设备活动识别
7. Influence of block copolymer feature size on reactive ion etching pattern transfer into silicon [O] . M Dialameh, F Ferrarese Lupi, D Imbraguglio, 2017

机译：嵌段共聚物特征尺寸对硅反应离子蚀刻图案转移的影响
8. Sub-100-nm-Wide, Deep Trenches Defined by Reactive Ion Etching [R] . Pang, S. W., Randall, J. N., Geis, M. W. 1986

机译：由反应离子蚀刻定义的低于100nm宽的深沟槽

Reactive ion etching of CVD-diamond for sensor devices with a minimum feature size of 100 nm

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