• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文学位 >Reactive ion etching of crystalline silicon carbide and fabrication of silicon carbide devices.
【24h】

Reactive ion etching of crystalline silicon carbide and fabrication of silicon carbide devices.

机译：结晶碳化硅的反应离子刻蚀和碳化硅器件的制造。

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The overall goal of this thesis is to fabricate SiC/Si heterojunction devices. The final SiC/Si device to be implemented is the SiC/Si heterojunction bipolar transistor. Two of the most challenging aspects of SiC device fabrication are the etching of SiC and the formation of metal contacts to SiC. Reactive ion etching was investigated for etching SiC. The SiC etch rate is determined as a function of oxygen in different fluorinated gases plasma and the optimum conditions of SiC RIE can be obtained. The specific goals are to completely understand the overall process and to develop conditions for high etch rate, anisotropy, high selectivity, residue-free, and low damage etch process to pattern device structure. A residue-free RIE of SiC has been first reported by the Nanoelectronics Laboratory of the University of Cincinnati. The effects of various RIE process parameters on the final device performance are studied.;Sputter deposition was used for the SiC metallization study. Contacts between various metals and SiC were characterized by I-V and C-V measurements. The metallization processes were evaluated for adhesion, stability, contact resistance, surface treatment, annealing, and suitability for device fabrication. To understand and optimize the SiC contact process conditions, the effect of different metal and annealing temperature are studied. Finding the lowest specific contact resistance is the part of the goal of this thesis. The electrical characterization of SiC metallization is studied in conjunction with the evaluation of the final device performance.;The final device is the SiC/Si heterojunction bipolar transistor (SiC/Si HBT). The electrical properties and fabrication processes of SiC/Si HBT were investigated. Based on various fabrication techniques, the device's performance and fabrication process are discussed.
机译：本文的总体目标是制造SiC / Si异质结器件。最终要实现的SiC / Si器件是SiC / Si异质结双极晶体管。 SiC器件制造中最具挑战性的两个方面是SiC的蚀刻和与SiC的金属接触的形成。研究了反应离子刻蚀以刻蚀SiC。确定在不同的氟化气体等离子体中，SiC蚀刻速率与氧气的关系，从而可以获得SiC RIE的最佳条件。具体目标是完全了解整个过程，并为图案器件结构的高蚀刻速率，各向异性，高选择性，无残渣和低损伤蚀刻工艺开发条件。辛辛那提大学纳米电子实验室首先报道了无残留SiC RIE。研究了各种RIE工艺参数对最终器件性能的影响。溅射沉积用于SiC金属化研究。通过I-V和C-V测量来表征各种金属与SiC之间的接触。评估了金属化工艺的粘附性，稳定性，接触电阻，表面处理，退火以及对器件制造的适应性。为了理解和优化SiC接触工艺条件，研究了不同金属和退火温度的影响。找到最低的比接触电阻是本论文目标的一部分。结合对最终器件性能的评估，研究了SiC金属化的电学特性。最终器件是SiC / Si异质结双极晶体管（SiC / Si HBT）。研究了SiC / Si HBT的电学性质和制备工艺。基于各种制造技术，讨论了器件的性能和制造过程。

著录项

  • 作者

    Yih, Pei Haur.;

  • 作者单位

    University of Cincinnati.;

  • 授予单位 University of Cincinnati.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 1994
  • 页码 141 p.
  • 总页数 141
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号