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首页> 外文会议>IEEE Conference on Nanotechnology >Micro Regular Octahedron and Truncated Octahedron Cavities on <111> Oriented Silicon Wafer
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Micro Regular Octahedron and Truncated Octahedron Cavities on <111> Oriented Silicon Wafer

机译：微常规八面体和截短的八面体腔<111>取向硅晶片

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摘要

Octahedron cavities fabricated on <111>-oriented silicon wafer combining with the dry etching of reactive ion etching-inductively coupled plasma (RIE-ICP) and the wet etching of ethylene diamine, pyrocatechol, and water (EDP/EPW) were investigated. The etching characteristics are analyzed depending on different etching conditions, and regular or irregular octahedron cavities can be obtained by self etch stop of smooth {111} crystalline planes. RIE-ICP etching is used to define the depth of cavities, and EDP etching is followed for removing the roughness. The final self-etch-stop profiles of cavities are determined by the dimension of mask patterns, aligning direction and the depth of cavities in the wafer. The results of etched cavities confirmed the condition to determine the final etching profiles.
机译：研究了与反应离子蚀刻电感耦合等离子体（RIE-ICP）的干法蚀刻的<111的硅晶片上制造的八面体腔与乙二胺，PyrocateChol和水（EDP / EPW）的湿法蚀刻组合。根据不同的蚀刻条件分析蚀刻特性，并且通过平滑{111}结晶平面的自蚀刻停止，可以获得常规或不规则的八面体腔。 RIE-ICP蚀刻用于定义空腔深度，并且遵循EDP蚀刻以去除粗糙度。空腔的最终自蚀刻型材由掩模图案，对准方向和晶片中空腔深度的尺寸决定。蚀刻腔的结果证实了确定最终蚀刻曲线的条件。

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