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Growth of quaternary AlInGaN/GaN Heterostructures by Plasma Induced Molecular Beam Epitaxy with high In Concentration

机译：血浆诱导分子束外延季季季蒽仑/ GaN异质结构的生长

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Growth of AlInGaN/GaN heterostructures on sapphire substrates was achieved by plasma induced molecular beam epitaxy. Different alloy compositions were obtained by varying the growth temperature with constant Al, In, Ga and N fluxes. The In content in the alloy, measured by Rutherford Backscattering Spectroscopy, increased from 0.4% to 14.5% when the substrate temperature was decreased from 775 to 665°C. X-Ray reciprocal space maps of asymmetric AlInGaN (2.05) reflexes were used to measure the lattice constants and to verify the lattice match between the quaternary alloy and the GaN buffer layers.

机译：通过等离子体诱导的分子束外延实现了蓝宝石底物上的alingan / GaN异质结构的生长。通过用恒定的Al，In，Ga和N助熔剂改变生长温度来获得不同的合金组合物。通过Rutherford反向散射光谱测量的合金中的含量从775℃下降到665℃时从0.4％增加到14.5％。使用不对称的Alingan（2.05）反射的X射线往复式空间图用于测量晶格常数并验证季合金和GaN缓冲层之间的格子匹配。

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《MRS Meeting》|2001年||共5页
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C.; M. Stutzmann; B. Rauschenbach; A. Wenzel; O. Ambacher; L. Goergens; C. R. Miskys; A. P. Lima;
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1. Growth and characterizations of A1GaN/GaN heterostructures using multi-A1N buffer layers in plasma-assisted molecular beam epitaxy [J] . X.Q.Shen, T.Ide, S.H.Cho Journal of Crystal Growth . 2001,第期

机译：在等离子体辅助分子束外延中使用多层AlN缓冲层生长和表征AlGaN / GaN异质结构
2. Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy [J] . Martina Morassi, Ludovic Largeau, Fabrice Oehler, Crystal growth & design . 2018,第4期

机译：富含铟indan / GaN轴向纳米线异质结构的形态剪裁和生长机理通过等离子体辅助分子束外延
3. Plasma assisted molecular beam epitaxy growth and effect of varying buffer thickness on the formation of ultra-thin In_(0.17)Al_(0.83)N/GaN heterostructure on Si(111) [J] . Subhra Chowdhury, Dhrubes Biswas Applied Physics Letters . 2015,第8期

机译：等离子体辅助分子束外延生长以及缓冲层厚度的变化对Si（111）上超薄In_（0.17）Al_（0.83）N / GaN异质结构形成的影响
4. Growth of quaternary AlInGaN/GaN Heterostructures by Plasma Induced Molecular Beam Epitaxy with high In Concentration [C] . C., M. Stutzmann, B. Rauschenbach, MRS Meeting . 2001

机译：血浆诱导分子束外延季季季蒽仑/ GaN异质结构的生长
5. Growth and Behaviors of Inn/Gan Multiple Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy [D] . Li, Chen. 2018

机译：等离子体辅助分子束外延的Inn / GaN多量子孔的生长和行为
6. Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy [O] . Ing-Song Yu, Chun-Pu Chang, Chung-Pei Yang, 2014

机译：等离子体辅助分子束外延通过液滴外延对Si（111）上的GaN纳米点进行表征和密度控制
7. Importance of growth temperature on achieving lattice-matched and strained InAlN/GaN heterostructure by plasma-assisted molecular beam epitaxy [O] . K. Jeganathan, M. Shimizu 2014

机译：生长温度对等离子体辅助分子束外延实现晶格匹配和应变InalN / GaN异质结构的重要性

Growth of quaternary AlInGaN/GaN Heterostructures by Plasma Induced Molecular Beam Epitaxy with high In Concentration

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