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首页> 外文会议>International conference on molecular beam epitaxy >Correlation of the structural and optical properties of GaN grown on vicinal (001) GaAs substrates with the plasma-assisted MBE growth conditions
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Correlation of the structural and optical properties of GaN grown on vicinal (001) GaAs substrates with the plasma-assisted MBE growth conditions

机译：在邻近（001）GaAs底物上生长的GaN结构和光学性质的相关性与等离子体辅助MBE生长条件

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摘要

Molecular beam epitaxy, using a radio frequency nitrogen plasma source, was investigated for the direct growth of GaN thin films on vicinal (00 1) GaAs substrates. It has been found possible to grow GaN thin films with various types of crystal structure. Cubic (00 1) GaN with epitaxial relationship to the GaAs substrate could be grown without GaAs nitridation and under stoichiometric N/Ga flux ratio conditions. Hexagonal mixing in the cubic GaN films occurred mainly as domains with the [0001] oriented parallel to the GaAs surface normal. Their origin was related to irregularities at the GaAs surface, produced by interaction with the N-beam. Layers which exhibited intense 17 K photoluminescence with the main peak at approximately 3.42eV, presented a polycrystalline hexagonal structure with a domain width of several 100 nm. These layers did not exhibit a "yellow-band" luminescence.
机译：使用射频氮血浆源的分子束外延被研究用于在邻乘（001）GaAs基材上的GaN薄膜的直接生长。已经发现，可以使用各种类型的晶体结构生长GaN薄膜。可以在没有GaAs氮化的情况下生长与GaAs衬底的外延关系的立方（001）GaN，并且在化学计量的N / GA助熔剂比条件下生长。立方GaN薄膜中的六边形混合主要是具有与GaAs表面平行的域的畴正常。它们的来源与GaAs表面的不规则有关，通过与n梁的相互作用而产生。在大约3.42EV的主要峰值上表现出强烈的17k光致发光的层，呈现了多晶六边形结构，域宽度为100nm。这些层没有表现出“黄频带”发光。

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