Strip geometry light emitting diodes over pulsed lateral epitaxial overgrown GaN for solidstate white lighting

机译：剥离几何发光二极管在脉冲横向外延覆盖GaN中的脉冲白色照明

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The stripe geometry InGaN/GaN and InGaN/AlInGaN multiple quantum well light emitting diodes (LEDs) were fabricated using pulsed lateral epitaxial overgrowth and conventional GaN layers over sapphire. Material quality improvement due to overgrowth of GaN layer results in enhanced LED output power for broad area square geometry devices emitting at 430 nm. Using of stripe geometry edge emitting LEDs allows considerable reducing of the device differential resistance and improving of the output power density. The power enhancement and ease of thermal management makes the arrays of stripe geometry LEDs to be promising for high power applications.

机译：使用脉冲横向外延过度生长和在蓝宝石上，使用脉冲横向外延过度生长和传统GaN层制造条纹几何ingaN / GaN和IngaN / Alingan多量子阱发光二极管（LED）。由于GaN层的过度生长导致的材料质量改进导致增强的LED输出功率，用于在430nm处发射的宽面积正方形几何设备。使用条纹几何边缘发射LED允许相当大的降低器件差动电阻和提高输出功率密度。电力增强和易于热管理使条纹几何形状LED阵列对高功率应用有前途。

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《International Conference on Nitride Semiconductors》|2002年||共4页
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M. Shatalov; A. Chitnis; D. Basak; J. W. Yang; Q. Fareed; G. Simin; M. Asif Khan; R. Gaska; M. S. Shur;
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2. Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN [J] . ARPAN CHAKRABORTY, KWANG CHOONG KIM, FENG WU, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第11期

机译：横向外延生长的a平面GaN上制备的非极性发光二极管的结构和电致发光特性
3. Ba2Ca(PO4)2:Eu~(2+) emission-tunable phosphor for solidstate lighting: luminescent properties and application as white light emitting diodes [J] . Hua Yu, Degang Deng, Dantong Zhou Journal of Materials Chemistry, C. materials for optical and electronic devices . 2013,第35期

机译：用于固态照明的Ba2Ca（PO4）2：Eu〜（2+）发射可调磷光体：发光特性和作为白色发光二极管的应用
4. Strip geometry light emitting diodes over pulsed lateral epitaxial overgrown GaN for solidstate white lighting [C] . M. Shatalov, A. Chitnis, D. Basak, International Conference on Nitride Semiconductors . 2002

机译：剥离几何发光二极管在脉冲横向外延覆盖GaN中的脉冲白色照明
5. White Organic Light Emitting Diodes for Solid State Lighting -- A Path Towards High Efficiency and Device Stability. [D] . Oloye, Temidayo Abiola. 2016

机译：固态照明用白色有机发光二极管-通往高效和器件稳定性的道路。
6. Electrically driven highly efficient three-dimensional GaN-based light emitting diodes fabricated by self-aligned twofold epitaxial lateral overgrowth [O] . Yang-Seok Yoo, Hyun Gyu Song, Min-Ho Jang, -1

机译：通过自对准双倍外延横向过生长制造的电驱动高效的基于GaN的三维GaN发光二极管
7. Characteristics of ultraviolet nonpolar InGaN/GaN light- emitting diodes using trench epitaxial lateral overgrowth technology [O] . Shih-chun Ling, Te-chung Wang, Tsung-shine Ko, 2015

机译：采用沟槽外延横向过生长技术的紫外非极性InGaN / GaN发光二极管的特性

Strip geometry light emitting diodes over pulsed lateral epitaxial overgrown GaN for solidstate white lighting

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