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Fabrication of Active Smart Pixel with Polymerized Gate Insulator by Vapor Deposition Polymerization

机译:通过气相沉积聚合用聚合栅极绝缘子制备活性智能像素

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In all-organic thin-film transistor with stacked-inverted top-contact structure, it was investigated that field-effect mobility, threshold voltage, on-off current ratio, and sub-threshold slop with 450-nm-thick gate dielectric film were 0.134 cm~2/Vs, -7 V, 10~6 A/A, and 1 V/decade, respectively. Details on the explanation of fabricated four by four array active pixels using the VDP method as two transistors method and phosphorescent organic light emitting devices using Ir(ppy)_3 as emitting material and its electrical and optical characteristics will be discussed later.
机译:在具有堆叠倒置顶触头结构的全有机薄膜晶体管中,研究了场效应迁移率,阈值电压,接通电流比和具有450nm厚的栅极电介质膜的子阈值斜面0.134厘米〜2 / vs,-7 v,10〜6 a / a,和1 v /十年。有关使用VDP方法的四个阵列有源像素制造的解释的细节作为使用IR(PPY)_3作为发射材料的两个晶体管方法和磷光有机发光器件及其电气和光学特性。

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