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首页> 外文会议>International Congress on Applications of Lasers and Electro-Optics >HIGH QUALITY LASER MICROMACHINING OF SILICON: A CRYSTALLOGRAPHIC COMPARISON OF PROCESS RESULTS ACHIEVED WITH STATE-OF-THE-ART TRIPLED ND:YAG AND IR LASERS
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HIGH QUALITY LASER MICROMACHINING OF SILICON: A CRYSTALLOGRAPHIC COMPARISON OF PROCESS RESULTS ACHIEVED WITH STATE-OF-THE-ART TRIPLED ND:YAG AND IR LASERS

机译：硅的高品质激光微机械线：用最新的三拔的Nd：YAG和IR激光器实现的过程结果的晶体比较

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摘要

The ability to cut, scribe, and drill holes and slots in silicon material is of great interest for many applications in the microelectronics and semiconductor industry. We investigated the use of a Q-switched frequency-tripled Nd:YAG laser for rapid micromachining of silicon and compared the results to results achieved with a pulsed fiber laser operating near 1060nm. Cutting, drilling, marking and surface ablation were performed by direct writing using a high-speed x-y galvano-mechanical beam positioner equipped with a telecentric lens focusing system and a high precision x-y-z stage. This paper focuses on circular and linear cutting experiments on "thick" silicon wafers, i.e. wafers with a thickness of 440 μm and above. The sample morphology was studied by scanning electron microscopy; the results indicate 8-10 times larger surface roughness on the IR processed samples. We also applied X-ray double-crystal topography to analyse the defects and local strain induced by the two laser processes. The topographs show remarkable differences between the cuts generated by the UV laser and the cuts produced by the IR laser. Our data reveals the capabilities and limitations of both laser types for micromachining in different silicon wafers and helps the user select a laser for a specific process. The results demonstrate the advantages of the short-wavelength laser for damage-free micromachining of silicon.
机译：在微电子和半导体行业中的许多应用中，剪切和钻孔和钻孔和槽的能力对许多应用感兴趣。我们调查了使用Q开关的变频器的Nd：YAG激光器进行硅的快速微机械线，并将结果与​​脉冲光纤激光器相比在1060nm附近进行的结果进行了比较。通过使用配备有远心透镜聚焦系统和高精度X-Y-Z级的高速X-Y GALVANO-MANCHECHEN射线定位器直接写入切割，钻孔，标记和表面消融。本文侧重于“厚”硅晶片上的圆形和线性切割实验，即厚度为440μm及以上的晶片。通过扫描电子显微镜研究样品形态;结果表明IR加工样品上的表面粗糙度较大8-10倍。我们还应用了X射线双晶形貌，分析了两种激光过程引起的缺陷和局部应变。拓扑表格在UV激光器产生的切口和IR激光器产生的切口之间显示出显着差异。我们的数据揭示了激光类型在不同硅晶片中进行微机器的能力和限制，并帮助用户选择用于特定过程的激光器。结果证明了短波长激光器用于无硅损坏微机械线的优点。

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