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Improvement of microscopic and macroscopic uniformity in 4-inch InP substrate for IC application by vertical boat growth

机译:通过垂直船生长改善4英寸INP衬底的微观和宏观均匀性

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Macroscopic and microscopic uniformity in 4-inch InP substrates has been significantly improved by new developments in SEI's Vertical Boat (VB) technique. In this paper, we will report improvements, in etch-pit density (EPD) distribution, micro-resistivity profiles, and photoluminescence (intensity and 4.2K spectra), for 4-inch InP VB in comparison to both VCZ (SEI proprietary Vapor pressure controlled Chockralski) and commercially available VGF substrates.
机译:通过SEI垂直船(VB)技术的新发展,4英寸INP基板中的宏观和微观均匀性得到了显着的改善。在本文中,我们将在与VCZ(SEI专有蒸汽压力相比,在蚀刻凹坑密度(EPD)分布,微电阻率分布,微电阻率分布,微电阻率分布,微电阻率分布和光致发光(强度和4.2K光谱)中报告改进。受控Chockralski)和市售的VGF基材。

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