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Architectural trade-offs for SiGe BiCMOS direct conversion receiver front-ends for IEEE802.11a

机译:用于IEEE802.11a的SiGe BICMOS直接转换接收器前端的建筑折衷

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We present two different approaches towards development of direct conversion receiver front-ends for IEEE8O2.11a applications in IBM's SiGe BiCMOS technology. These approaches include: a) conventional 50Ω system, b) fully monolithic front-end. The developed ICs are targeted for the upper U-NII band at frequency range of 5.725-5.825 GHz and include a low noise amplifier (LNA), two mixers in quadrature, and a frequency divider. All of these circuits use fully on chip implementation. The UNA provides a gain of 11 dB, noise figure of 4.4dB, IIP3 of -2dBm and occupies an area of 0.7mm × 0.7mm. A micromixer topology has been adopted in case of 50Ω system and provides 9.2dB gain, input matching of 16dB, double sideband noise figure of 19.5 dB, input 1 dB compression point of -3 dBm, IIP3 and IIP2 of +6 and +32 dBm respectively and occupies an area of 1.6mm × 1mm. The fully integrated receiver utilizes single-ended Gilbert cell mixers, and occupies a compact area of 1.6mm × 1.3mm. It exhibits 20.2dB gain, input 1 dB compression point (input P1dB) of -15.5 dBm, input matching of 15 dB, IIP3 and IIP2 of -3 dBm and +31 dBm respectively, double sideband noise figure of 7.1 dB, and LO to RF leakage of 78 dB. The LNA draws 5.78mA from a 2.8V supply, both micromixers draw 10.3mA from 3.lV supply, both Gilbert cell mixers draw 12.71mA from a 3.75V supply, and the frequency divider draws 22mA from 3.75V supply.
机译:我们提出对在IBM的SiGe BiCMOS技术IEEE8O2.11a应用程序直接转换接收器前端的开发两种不同的方法。这些方法包括:a)常规50Ω系统,b)中完全单片前端。的开发IC时,针对在5.725-5.825 GHz的频率范围的上U-NII频带,并且包括一个低噪声放大器(LNA),两个正交混频器,和一个分频器。所有这些电路的芯片上实现充分利用。在UNA提供11dB的,4.4分贝的噪声系数,-2dBm的IIP3的增益,并占据0.7毫米×0.7毫米的区域。微混合器拓扑在50Ω系统的情况下被采用,并提供9.2分贝增益,16分贝的输入匹配,19.5分贝-3 dBm时,IIP3和的6和32 dBm的IIP2,输入1个dB压缩点双边带噪声系数分别并占据1.6毫米×1毫米的区域。完全集成的接收器利用单端吉尔伯特单元混频器,并占据1.6毫米×1.3毫米的紧凑区域。它表现出20.2分贝增益,的-15.5 dBm的输入1dB压缩点(P1dB为输入),15dB的,IIP3输入匹配和分别的IIP2 -3 dBm的和+31 dBm时,的7.1分贝双边带噪声系数,和LO到的78分贝RF泄漏。所述LNA绘制5.78毫安从2.8V供给,既微型混合器从3.lV供给绘制10.3毫安,既吉尔伯特单元混频器绘制12.71毫安从3.75V供给,分频器从3.75V电源吸收22毫安。

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