X-band successive detection log amplifier/limiter MMIC implemented in 0.15 μm double recess PHEMT

机译：X波段连续检测对数放大器/限制器MMIC在0.15μm双凹陷phemt中实现

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Design and performance of a X-Band Successive Detection Log Amplifier/Limiter MMIC covering 8 to 12 GHz is reported. The three-stage amplifier is a cascadeable block providing 20 dB nominal gain, 5.5 dB noise figure, +7 dBm limited output, < 2:] input/output VSWR, and a 20 dB log range at 50 mV/dBm. This is the first reported use of successive detection at X-Band frequencies. Previously reported results [1,2] have been below 7 GHz, required four times the power for the same dynamic range, and twice the chip count. The amplifier is implemented in a fully selective 0.15 um double recess power PHEMT process.

机译：报告了X波段连续检测的设计和性能/限制器MMIC覆盖8至12GHz。三级放大器是一种可级联的块，提供20 dB标称增益，5.5 dB噪声系数，+7 dBm Limited输出，<2：]输入/输出VSWR，以及50 mV / dBm的20 dB log范围。这是第一个报告在X波段频率下连续检测的使用。先前报道的结果[1,2]高于7 GHz，需要四倍的动力范围，以及芯片数量的两倍。放大器以完全选择的0.15UM双凹槽功率PHEMT过程实现。

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《Annual IEEE Gallium Arsenide Integrated Circuit Symposium》|2002年||共4页
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J. J. Komiak; W. Kong; K. Nichols;
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中图分类 TN43-53;
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1. High-performance X-band MMIC LNAs using dry recessed PHEMTs [J] . Kwon Y., Sovero E.A. Electronics Letters . 1997,第9期

机译：使用干式嵌入式PHEMT的高性能X波段MMIC LNA
2. A Wideband Extended-Dynamic-Range Successive Detection Logarithmic Amplifier Based on 0.15μm GaAs pHEMT Technology [J] . Javadifar Nader, Dousti Massoud, Haighassem Hassan Journal of circuits, systems and computers . 2019,第4期

机译：基于0.15μmGaAs pHEMT技术的宽带扩展动态范围连续检测对数放大器
3. An ultra‐wideband distributed amplifier MMICs based on 0.15‐um GaAs pHEMT technology [J] . International journal of numerical modelling . 2020,第3期

机译：基于0.15um GaAs pHEMT技术的超宽带分布式放大器MMIC
4. X-band successive detection log amplifier/limiter MMIC implemented in 0.15 /spl mu/m double recess PHEMT [C] . Komiak, J.J., Kong, Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest . 2002

机译：X波段连续检测对数放大器/限幅器MMIC以0.15 / spl mu / m双凹槽PHEMT实现
5. A 40 GHz Power Amplifier Using a Low Cost High Volume 0.15 um Optical Lithography pHEMT Process. [D] . Mays, Kenneth W. 2012

机译：采用低成本大体积0.15 um光学光刻pHEMT工艺的40 GHz功率放大器。
6. Compact and broadband microstrip power amplifier MMIC with 400-mW output power using0.15-µm GaAs PHEMTs [O] . Bessemoulin A., Mahon S., Dadello Anna, 2005

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7. 0.1um InP HEMT devices and MMICs for cryogenic low noise amplifiers from x-band to w-band [R] . Grundbacher, R., Lai, R., Barsky, M., 2002

机译：0.1um Inp HEmT器件和用于从x波段到W波段的低温低噪声放大器的mmIC

X-band successive detection log amplifier/limiter MMIC implemented in 0.15 μm double recess PHEMT

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