100+ GHz static divide-by-2 circuit in InP-DHBT technology

机译：100+ GHz静态除以-2 INP-DHBT技术电路

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Static dividers in 135 GHz InP-DHBT technology have been designed, fabricated and measured. Circuits are operational from DC to 100 GHz. Due to limitations in available measurement equipment, investigation of the circuit operation beyond 100 GHz is not possible at this time, however, already, to the authors' knowledge, this is the highest toggling frequency reported in any static circuit in any technology. The circuit consumes about 150 mA from a single 5V supply and allocates a total area of 675 × 900 μm{sup}2.

机译：135 GHz INP-DHBT技术中的静态分频器已经设计，制造和测量。电路从直流运行到100 GHz。由于可用测量设备的限制，此时不可能对超出100 GHz的电路操作的调查，然而，对于作者的知识，这是任何技术中的任何静态电路中报告的最高转接频率。电路从单个5V电源消耗约150 mA，并分配总面积为675×900μm{sup} 2。

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《Annual IEEE Gallium Arsenide Integrated Circuit Symposium》|2002年||共3页
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Mehran Mokhtari; Charles Feilds; Rajesh D. Rajavel;
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1. 100+ GHz static divide-by-2 circuit in InP-DHBT technology [J] . Mokhtari M., Fields C., Rajavel R.D., IEEE Journal of Solid-State Circuits . 2003,第9期

机译：InP-DHBT技术中的100+ GHz静态2分频电路
2. A 20 Gb/s 1:4 DEMUX Without Inductors and Low-Power Divide-by-2 Circuit in 0.13 $mu{hbox {m}}$ CMOS Technology [J] . Byung-Guk Kim, Lee-Sup Kim, Sangjin Byun, IEEE Journal of Solid-State Circuits . 2008,第2期

机译：采用0.13 $ mu {hbox {m}} $ CMOS技术的无电感器和低功耗2分频电路的20 Gb / s 1：4 DEMUX
3. Static frequency dividers for high operating speed (25 GHz, 170 mW) and low power consumption (16 GHz, 8 mW) in selective epitaxial Si bipolar technology [J] . Felder A., Stengl R. Electronics Letters . 1993,第12期

机译：静态分频器，用于选择性外延Si双极技术中的高工作速度（25 GHz，170 mW）和低功耗（16 GHz，8 mW）
4. 100+ GHz static divide-by-2 circuit in InP-DHBT technology [C] . Mokhtari M., Fields C., Rajavel R.D. Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest . 2002

机译：InP-DHBT技术中的100+ GHz静态2分频电路
5. Ka-Band and W-Band Millimeter-Wave Wideband Linear Power Amplifier Integrated Circuits at 30 GHz and 90 GHz with Greater Than 100 mW OutputPowers in Commercially-Available 0.12 Micron Silicon Germanium HBT Technology [D] . Chang, Michael S. 2017

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7. An investigation of the impact of technology scaling on power wasted as short-circuit current in low voltage static CMOS circuits [O] . Amitava Chatterjee, Mahalingam Nandakumar, Ih-chin Chen 1996

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100+ GHz static divide-by-2 circuit in InP-DHBT technology

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