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首页> 外文会议>Conference on optical microlithography >Reduction of across wafer CDU via constrained optimization of a multi-channel PEB plate controller based on in-situ measurements of thermal time constants
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Reduction of across wafer CDU via constrained optimization of a multi-channel PEB plate controller based on in-situ measurements of thermal time constants

机译：基于热时间常数的原位测量，通过多通道PEB板控制器的约束优化通过约束优化来减少晶片CDU

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摘要

As line widths approach 90nm node in volume production, post exposure bake (PEB) uniformity becomes a much larger component of the across wafer critical dimension uniformity (CDU). In production, the need for PEB plate matching has led to novel solutions such as plate specific dose offsets. This type of correction does not help across wafer CDU. Due to unequal activation energies of the critical PEB processes, any thermal history difference can result in a corresponding CD variation. The rise time of the resist to the target temperature has been shown to affect CD, with the most critical time being the first 5-7 seconds. A typical PEB plate has multi-zone thermal control with one thermal sensor per zone. The current practice is to setup each plate to match the steady-state target temperature, ignoring any dynamic performance. Using an in-situ wireless RTD wafer, it is possible to characterize the dynamic performance, or time constant, of each RTD location on the sensing wafer. Constrained by the zone structure of the PEB plate, the proportional, integral and derivative (PID) settings of each controller channel could be optimized to reduce the variations in rise time across the RTD wafer, thereby reducing the PEB component of across wafer CDU.
机译：作为线宽接近体积制造中的90nm节点，曝光后烘烤（PEB）均匀性成为跨晶片临界尺寸均匀性（CDU）的更大组分。在生产中，对PEB板匹配的需求导致了新的溶液，如板式特定剂量偏移。这种类型的校正横跨晶圆CDU没有帮助。由于关键PEB过程的不平等激活能量，任何热历史差异都会导致相应的CD变化。已显示抗蚀剂对目标温度的上升时间影响CD，最关键的时间是前5-7秒。典型的PEB板具有多区热控制，每个区域具有一个热传感器。目前的做法是设置每个板以匹配稳态目标温度，忽略任何动态性能。使用原位无线RTD晶片，可以在感测晶片上表征每个RTD位置的动态性能或时间常数。由PEB板的区域结构约束，可以优化每个控制器信道的比例，积分和导数（PID）设置，以降低RTD晶片上的上升时间的变化，从而减少晶片CDU的PEB分量。

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