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首页> 外文会议>Conference on Optical Microlithography XVII pt.2; 20040224-20040227; Santa Clara,CA; US >Reduction of across wafer CDU via constrained optimization of a multi-channel PEB plate controller based on in-situ measurements of thermal time constants
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Reduction of across wafer CDU via constrained optimization of a multi-channel PEB plate controller based on in-situ measurements of thermal time constants

机译：通过基于热时间常数的原位测量的多通道PEB板控制器的约束优化来减少整个晶圆CDU

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摘要

As line widths approach 90nm node in volume production, post exposure bake (PEB) uniformity becomes a much larger component of the across wafer critical dimension uniformity (CDU). In production, the need for PEB plate matching has led to novel solutions such as plate specific dose offsets. This type of correction does not help across wafer CDU. Due to unequal activation energies of the critical PEB processes, any thermal history difference can result in a corresponding CD variation. The rise time of the resist to the target temperature has been shown to affect CD, with the most critical time being the first 5-7 seconds. A typical PEB plate has multi-zone thermal control with one thermal sensor per zone. The current practice is to setup each plate to match the steady-state target temperature, ignoring any dynamic performance. Using an in-situ wireless RTD wafer, it is possible to characterize the dynamic performance, or time constant, of each RTD location on the sensing wafer. Constrained by the zone structure of the PEB plate, the proportional, integral and derivative (PID) settings of each controller channel could be optimized to reduce the variations in rise time across the RTD wafer, thereby reducing the PEB component of across wafer CDU.
机译：随着批量生产中线宽接近90nm节点，曝光后烘烤（PEB）均匀性成为整个晶圆临界尺寸均匀性（CDU）的更大组成部分。在生产中，对PEB平板匹配的需求导致了新颖的解决方案，例如平板特定剂量补偿。这种类型的校正对整个晶片CDU没有帮助。由于关键PEB过程的活化能不相等，任何热历史差异都可能导致相应的CD变化。抗蚀剂上升到目标温度的时间已显示会影响CD，最关键的时间是前5到7秒。典型的PEB板具有多区域热控制，每个区域有一个热传感器。当前的做法是设置每个板以匹配稳态目标温度，而忽略任何动态性能。使用原位无线RTD晶圆，可以表征传感晶圆上每个RTD位置的动态性能或时间常数。受PEB板区域结构的约束，可以优化每个控制器通道的比例，积分和微分（PID）设置，以减少RTD晶圆上上升时间的变化，从而减少整个CDU上的PEB分量。

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