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首页> 外文会议>Electrochemical Society Meeting >AUGER AND LEED STUDIES OF THE SURFACE CHEMISTRY OF InP(lOO) WAFERS AFTER WET ETCHING, ION BOMBARDMENT, AND ELECTROCHEMICAL ETCHING
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AUGER AND LEED STUDIES OF THE SURFACE CHEMISTRY OF InP(lOO) WAFERS AFTER WET ETCHING, ION BOMBARDMENT, AND ELECTROCHEMICAL ETCHING

机译：在湿法蚀刻，离子轰击和电化学蚀刻后，螺旋钻和LEED研究INP（LOO）晶片的表面化学

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The objective of this investigation was to develop a procedure for cleaning InP, to investigate the electrochemistry of the InP(lOO) surface, and to look at the possibility of using electrochemical digital etching on InP. Wet etches included pretreatment with B^/CHjOH solution and a HF solution. Both appeared to remove C and O, but traces were still observed with Auger electron spectroscopy. TJV ozone cleaning on InP gave similar results, but left the surface with a phosphate layer. Ion bombardment and annealing of InP resulted in a clean, well-ordered surface with a (2x4) reconstruction. However, studies of the voltammetry of this surface suggested the presence of some dispersed clusters of metallic In. This In was easily oxidized electrochemically at -0.6 V. Solutions with various pHs were used to study the electrochemistry of the 'clean' InP surface. Acid electrolytes, 10 mM HC1 and 10 mM H2SO4, displayed the oxidation of the metallic In clusters, which diffused away, leaving a 'stable' surface displaying a simple (1X1) LEED pattern. Oxidation of the InP surface commenced above 0.2 V, and in higher pH solutions, resulted in the formation of a passive layer, including phosphate. At pH 9, reduction into the hydrogen evolution region, also resulted in the dissolution of some P, probably as a phosphine species. This was evidenced by the appearance of small amounts of metallic In. This then suggests that digital etching of InP is possible. That is, an atomic layer of P can first be reduced in a basic solution, and the resulting metallic In, can be oxidatively removed in an acidic solution.
机译：该研究的目的是制定清洁INP的程序，以研究INP（LOO）表面的电化学，并查看在INP上使用电化学数字蚀刻的可能性。湿法蚀刻包括预处理B ^ / CHJOH溶液和HF溶液。两者都似乎去除C和O，但仍然用螺旋钻电子光谱观察到痕迹。 INP上的TJV臭氧清洗具有类似的结果，但用磷酸层留下表面。 INP的离子轰击和退火导致干净，有序的表面，具有（2x4）重建。然而，对该表面的伏安法的研究表明存在一些分散的金属簇。在-0.6V中，可以在-0.6 V.使用各种pHS的溶液中易于氧化，研究“清洁”INP表面的电化学。酸电解质，10mM HC1和10mM H 2 SO 4显示，漫射簇的金属氧化，脱离，留下一个“稳定”表面，显示简单（1x1）LEED图案。 INP表面的氧化在0.2V以上开始，并且在更高的pH溶液中，导致形成无源层，包括磷酸盐。在pH9中，还原到氢进化区域，也导致一些p的溶解，可能是膦物种。这是通过少量金属的出现证明。然后，这表明INP的数字蚀刻是可能的。即，首先在碱性溶液中首先降低P的原子层，并且可以在酸性溶液中氧化除去所得的金属溶液。

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