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首页> 外文会议>International Conference on Advanced Ceramics and Composites >THE EFFECT OF DOPING WITH TITANIA AND CALCIUM TITANATE ON THE MICROSTRUCTURE AND ELECTRICAL PROPERTIES OF THE GIANT DIELECTRIC CONSTANT CERAMIC CaCu_3Ti_4O_(12)
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THE EFFECT OF DOPING WITH TITANIA AND CALCIUM TITANATE ON THE MICROSTRUCTURE AND ELECTRICAL PROPERTIES OF THE GIANT DIELECTRIC CONSTANT CERAMIC CaCu_3Ti_4O_(12)

机译：掺杂二氧化钛和钛酸钙的效果对巨电介质恒定陶瓷Cacu_3Ti_4O_（12）的微观结构和电性能

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Small amounts (1-5 mole percent ) of TiO_2 and CaTiO_3 were added to the giant dielectric constant ceramic CaCu_3Ti_4O_(12) (CCTO) in the attempt to lower dielectric loss without sacrificing high permittivity. The undopcd and doped ceramics had similar microsiructures consisting of primarily large grains in the range of 35 to 40 microns. Doping CCTO with TiO_2 lead to an increase in the dissipation factor of CaCu_3Ti_4O_(12) from 0.049 to a high of 0.078, while its permittivity increased from 43949 to 77585. Doping with CaTiO_3 followed a similar trend as the tan 8 increased to a high of 0.303 and the dielectric constant at I kHz increased to a high of 75687. Doping at these levels also led to a 50 percent drop in electrical breakdown voltage.
机译：在尝试降低介电损耗的情况下，将少量（1-5摩尔百分比）的TiO_2和CatiO_3加入到巨介电常数陶瓷Cacu_3TI_4O_（12）（CCTO）中，而不牺牲高介电常数。未染色物和掺杂的陶瓷具有类似的微观微观，主要是大颗粒在35至40微米的范围内。用TiO_2掺杂CCTO导致Cacu_3Ti_4O_（12）的耗散因子的增加，从0.049到0.078的耗散量，而其介电常数从43949增加到77585.掺杂与Catio_3遵循类似的趋势，因为棕褐色8增加到高度0.303和I kHz的介电常数增加到75687的高度。在这些水平的掺杂也导致电击穿电压下降50％。

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