LARGE AREA LOW PRESSURE-CHEMICAL VAPOUR DEPOSITED ZnO:B FOR THIN FILM SILICON BASED SOLAR CELLS

机译：大面积低压化学蒸气沉积ZnO：B用于薄膜硅基太阳能电池

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This paper has been mainly dedicated to large area deposition of Zinc Oxide (ZnO) thin films by Low Pressure - Metal Organic Chemical Vapour Deposition A customized apparatus to grow ZnO on 30 × 30 cm~2 substrates has been developed in our laboratory, taking care of the design and the realisation of an original reactor geometry with a novel reactant distribution system. ZnO:B material, with a low sheet resistance (＜ 8 Ω/sq) and with a high transmittance (＞ 82%) in the whole wavelength range of photovoltaic interest, has been obtained. A homogeneous light scattering effect on large-area substrate, as a consequence of the uniform surface roughness of the ZnO film, has been achieved. The spatial distributions of both film thickness and sheet resistance have been measured. Since the spatial distribution of these material properties is strongly correlated to the spatial temperature uniformity, growth rate, resistivity and surface texturization have been studied at different deposition temperatures. From our experimental results we deduced that it was possible to select a range of deposition temperatures between 145 ÷ 153 °C where the material properties are quite similar and excellent in terms of transparency, conductivity and texturization.

机译：本文主要专用于低压 - 金属有机化学气相沉积的氧化锌（ZnO）薄膜的大面积沉积，在我们的实验室中开发了30×30cm〜2基底上的定制装置。具有新型反应物分布系统的原始反应器几何形状的设计与实现。 ZnO：B材料，具有低薄层电阻（<8Ω/ sq）和在光伏兴趣的整个波长范围内的高透射率（> 82％）。已经实现了在大面积基板上的均匀光散射效应，作为ZnO膜的均匀表面粗糙度的结果。已经测量膜厚度和薄层电阻的空间分布。由于这些材料特性的空间分布与空间温度均匀性强烈相关，因此在不同的沉积温度下已经研究了生长速率，电阻率和表面纹理。从我们的实验结果，我们推导出来，可以选择145℃的沉积温度范围在145℃之间的沉积温度范围内，其中材料特性在透明度，导电性和纹理化方面非常相似且优异。

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《European Photovoltaic Solar Energy Conference》|2008年||共4页
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作者
M. L. Addonizio; C. Diletto; A. Antonaia;
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中图分类 TK51-53;
关键词
TCO; ZnO:B; LP-MOCVD;

机译：TCO;ZnO：B;LP-MOCVD;

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LARGE AREA LOW PRESSURE-CHEMICAL VAPOUR DEPOSITED ZnO:B FOR THIN FILM SILICON BASED SOLAR CELLS

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