A NEW METHOD FOR HIGH-RATE DEEP DRY ETCHING OF SILICATE GLASS WITH VARIABLE ETCH PROFILE

机译：一种具有可变蚀刻轮廓的硅酸盐玻璃的高速速度深蚀刻的一种新方法

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Compared to the deep reactive ion etching (DRIE) of silicon, the etching of silicate glasses by plasma processing is much more critical. Especially high etch rates as well as highly selective etching are challenging issues in this respect. The following paper reports on a dry etching method offering not only selective and high rate etching but a high flexibility for the etch profile too.

机译：与硅的深反应离子蚀刻（Drie）相比，通过等离子体处理蚀刻硅酸盐玻璃的蚀刻更为重要。特别是高蚀刻速率以及高度选择性蚀刻是在这方面的挑战性问题。下面的纸张报告了一种不仅提供了选择性和高速蚀刻，而且还提供了蚀刻曲线的高柔韧性。

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《International Solid-State Sensors, Actuators and Microsystems Conference》|2007年||共4页
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A. Bertz; R. Fendler; R. Schuberth; W. Hentsch; Th. Gessner;
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中图分类 TP21-53;
关键词
Deep glass etching; Plasma processing; Etch rate; Etch selectivity; Etch profile;

机译：深玻璃蚀刻;等离子体加工;蚀刻速率;蚀刻选择性;蚀刻轮廓;

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专利

1. THE BLACK SILICON METHOD - A UNIVERSAL METHOD FOR DETERMINING THE PARAMETER SETTING OF A FLUORINE-BASED REACTIVE ION ETCHER IN DEEP SILICON TRENCH ETCHING WITH PROFILE CONTROL [J] . Jansen H., Legtenberg R., Elwenspoek M., Journal of Micromechanics and Microengineering . 1995,第2期

机译：黑色硅法-在轮廓控制下确定深硅沟槽刻蚀中基于氟的反应离子刻蚀参数设置的通用方法
2. THE BLACK SILICON METHOD - A UNIVERSAL METHOD FOR DETERMINING THE PARAMETER SETTING OF A FLUORINE-BASED REACTIVE ION ETCHER IN DEEP SILICON TRENCH ETCHING WITH PROFILE CONTROL [J] . Jansen H., Legtenberg R., Elwenspoek M., Journal of Micromechanics and Microengineering . 1995,第2期

机译：黑色硅法-在轮廓控制下确定深硅沟槽刻蚀中基于氟的反应离子刻蚀参数设置的通用方法
3. Formation of Nanoporous Features, Flat Surfaces, or Crystallographically Oriented Etched Profiles by the Si Chemical Dry Etching Using the Reaction of F2 + NO → F + FNO at an Elevated Temperature [J] . Satomi Tajima, Toshio Hayashi, Kenji Ishikawa The journal of physical chemistry, C. Nanomaterials and interfaces . 2013,第40期

机译：利用高温下F2 + NO→F + FNO的反应，通过Si化学干法刻蚀，形成纳米孔特征，平坦表面或晶体学取向的刻蚀轮廓
4. A NEW METHOD FOR HIGH-RATE DEEP DRY ETCHING OF SILICATE GLASS WITH VARIABLE ETCH PROFILE [C] . A. Bertz, R. Fendler, R. Schuberth, International Solid-State Sensors, Actuators and Microsystems Conference . 2007

机译：一种具有可变蚀刻轮廓的硅酸盐玻璃的高速速度深蚀刻的一种新方法
5. Plasma etch profiles modeling of silicon dioxide contact holes with etching and deposition. [D] . Liu, Chunli. 2002

机译：用蚀刻和沉积法对二氧化硅接触孔的等离子体蚀刻轮廓进行建模。
6. Effect of etch-and-rinse and self-etching adhesive systems on hardness uniformity of resin cements after glass fiber post cementation [O] . Fernanda Zander Grande da Cruz, Christiana Zander Grande, Douglas Augusto Roderjan, 2012

机译：玻璃纤维后胶结后蚀刻漂洗和自蚀刻胶粘剂体系对树脂胶粘剂硬度均匀性的影响
7. The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control [O] . Jansen Henri, Boer Meint de, Legtenberg Rob, 1995

机译：黑硅方法：通过轮廓控制确定深硅沟槽蚀刻中氟基反应离子蚀刻机参数设定的通用方法

A NEW METHOD FOR HIGH-RATE DEEP DRY ETCHING OF SILICATE GLASS WITH VARIABLE ETCH PROFILE

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