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X-Parameter Measurement Challenges for Unmatched Device Characterization

机译：无与伦比的设备表征的X参数测量挑战

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摘要

X-parameter technology provides simulation-based design of non-linear circuits with inherent accuracy that is attributed to measurement-based model extraction. Recent advancements have combined Non-linear Vector Network Analyzer measurements with impedance tuners to compliment the equivalent accuracy of load-pull measurements with the analytic convenience of equation-based large-signal models. This paper investigates the challenges incurred when modeling high-power transistors under variable complex impedance matching conditions. It also compares the predicted performance of the X-parameter model against an independent large-signal model provided by the manufacturer for a 10W transistor. The results show a good correlation between the two models when compared under load-pull impedance modulation.
机译：X参数技术提供了基于模拟的非线性电路设计，其具有基于测量的模型提取的固有精度。最近的进步使非线性矢量网络分析器测量与阻抗调谐器组合，以赞美负载测量的等效精度，并利用基于方程式的大信号模型的分析方便。本文调查了在可变复杂阻抗匹配条件下建模高功率晶体管时产生的挑战。它还将X参数模型的预测性能与用于10W晶体管提供的制造商提供的独立大信号模型进行比较。在负载阻抗调制下，两种型号之间的结果显示出良好的相关性。

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