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X-parameter measurement challenges for unmatched device characterization

机译:针对无与伦比的器件表征的X参数测量挑战

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摘要

X-parameter technology provides simulation-based design of non-linear circuits with inherent accuracy that is attributed to measurement-based model extraction. Recent advancements have combined Non-linear Vector Network Analyzer measurements with impedance tuners to compliment the equivalent accuracy of load-pull measurements with the analytic convenience of equation-based large-signal models. This paper investigates the challenges incurred when modeling high-power transistors under variable complex impedance matching conditions. It also compares the predicted performance of the X-parameter model against an independent large-signal model provided by the manufacturer for a 10W transistor. The results show a good correlation between the two models when compared under load-pull impedance modulation.
机译:X参数技术提供了基于仿真的非线性电路设计,其固有精度归因于基于测量的模型提取。最近的发展已将非线性矢量网络分析仪的测量结果与阻抗调谐器结合在一起,以基于等式的大信号模型的分析便利性来补充负载拉力测量的等效精度。本文研究了在可变复数阻抗匹配条件下对大功率晶体管进行建模时所面临的挑战。它还将X参数模型的预测性能与制造商为10W晶体管提供的独立大信号模型进行了比较。结果表明,在负载拉阻抗调制下,两个模型之间具有良好的相关性。

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